PSMN2R6-60PSQ NXP Semiconductors, PSMN2R6-60PSQ Datasheet - Page 12

• Manufacturer Part Number: PSMN2R6-60PSQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-60PSQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 150 A
• Resistance Drain-source Rds (on): 5.6 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 58 ns
• Gate Charge Qg: 140 nC
• Power Dissipation: 326 W
• Rise Time: 50 ns
• Typical Turn-off Delay Time: 87 ns

PSMN2R6-60PS
NXP Semiconductors
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
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the product is not suitable for automotive use. It is neither qualified nor
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automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN2R6-60PS
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© NXP B.V. 2013. All rights reserved
Product data sheet
5 February 2013
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