PSMN2R5-60PLQ NXP Semiconductors, PSMN2R5-60PLQ Datasheet - Page 4

• Manufacturer Part Number: PSMN2R5-60PLQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R5-60PLQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 150 A
• Resistance Drain-source Rds (on): 5.6 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 128 ns
• Gate Charge Qg: 223 nC
• Power Dissipation: 349 W
• Rise Time: 119 ns
• Typical Turn-off Delay Time: 224 ns

NXP Semiconductors
9. Thermal characteristics
Table 6.
PSMN2R5-60PL
Product data sheet
Fig. 3.
Fig. 4.
Symbol
R
R
th(j-mb)
th(j-a)
(A)
(A)
I
I
D
D
10
10
10
10
Avalanche rating; avalanche current as a function of avalanche time
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10
-1
1
4
3
2
10
Thermal characteristics
-1
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Limit R
Limit R
I
I
(A)
(A)
AL
AL
10
10
10
Conditions
All information provided in this document is subject to legal disclaimers.
Fig. 5
DSon
DSon
1
3
2
10
vertical in still air
-3
= V
= V
1
DS
DS
/ I
/ I
10
D
D
27 February 2013
-2
N-channel 60 V, 2.6 mΩ logic level MOSFET in SOT78
10
-1
DC
DC
(1)
(1)
(2)
(2)
t
AL
1
(ms)
003aak801
10
10
Min
-
-
PSMN2R5-60PL
Typ
0.35
60
© NXP B.V. 2013. All rights reserved
V
DS
t
t
p
p
003aak802
Max
(V)
100 us
100 us
1 ms
1 ms
10 ms
10 ms
100 ms
100 ms
0.43
-
= 10 us
= 10 us
10
2
Unit
K/W
K/W
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