IXXN110N65C4H1 Ixys, IXXN110N65C4H1 Datasheet - Page 4
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IXXN110N65C4H1
Manufacturer Part Number
IXXN110N65C4H1
Description
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
Manufacturer
Ixys
Datasheet
1.IXXN110N65C4H1.pdf
(7 pages)
Specifications of IXXN110N65C4H1
Rohs
yes
Product
IGBT Silicon Modules
Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.98 V
Continuous Collector Current At 25 C
210 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
750 W
Maximum Operating Temperature
+ 175 C
Package / Case
SOT-227B-4
Maximum Gate Emitter Voltage
20 V
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
0.01
100
0.1
60
50
40
30
20
10
0.00001
0
1
0
0
f
= 1 MHz
20
5
40
10
Fig. 7. Transconductance
60
0.0001
Fig. 9. Capacitance
T
15
J
= - 40ºC
80
I
V
C
CE
- Amperes
25ºC
100
20
- Volts
150ºC
C ies
C oes
C res
120
25
140
Fig. 11. Maximum Transient Thermal Impedance
0.001
30
160
35
180
Pulse Width - Seconds
200
40
0.01
240
200
160
120
16
14
12
10
80
40
8
6
4
2
0
0
100
0
T
R
dv / dt < 10V / ns
V
I
I
150
J
C
G
G
CE
= 150ºC
= 110A
= 10mA
20
= 2
= 325V
Ω
Fig. 10. Reverse-Bias Safe Operating Area
200
40
250
0.1
300
60
Fig. 8. Gate Charge
Q
IXXN110N65C4H1
G
350
- NanoCoulombs
V
80
CE
400
- Volts
100
450
1
120
500
550
140
600
160
650
180
700
10