IXXN110N65C4H1 Ixys, IXXN110N65C4H1 Datasheet - Page 3
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IXXN110N65C4H1
Manufacturer Part Number
IXXN110N65C4H1
Description
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
Manufacturer
Ixys
Datasheet
1.IXXN110N65C4H1.pdf
(7 pages)
Specifications of IXXN110N65C4H1
Rohs
yes
Product
IGBT Silicon Modules
Configuration
Single Dual Emitter
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.98 V
Continuous Collector Current At 25 C
210 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
750 W
Maximum Operating Temperature
+ 175 C
Package / Case
SOT-227B-4
Maximum Gate Emitter Voltage
20 V
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
© 2012 IXYS CORPORATION, All Rights Reserved
200
160
120
200
160
120
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
40
80
40
0
0
0
8
0
0.5
Fig. 3. Output Characteristics @ T
0.5
Fig. 1. Output Characteristics @ T
9
Fig. 5. Collector-to-Emitter Voltage vs.
1
10
1
Gate-to-Emitter Voltage
1.5
V
1.5
CE
11
V
V
2
CE
GE
- Volts
- Volts
- Volts
2.5
V
12
2
GE
V
GE
= 15V
= 15V
14V
13V
14V
13V
12V
3
I
2.5
13
C
J
J
= 220A
= 150ºC
110A
= 25ºC
3.5
55A
T
J
14
= 25ºC
3
4
11V
10V
8V
9V
7V
12V
10V
11V
9V
8V
7V
4.5
3.5
15
300
250
200
150
100
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
90
80
70
60
50
40
30
20
10
0
0
-50
0
4
V
GE
Fig. 2. Extended Output Characteristics @ T
V
GE
= 15V
2
-25
14V
= 15V
5
4
0
Fig. 4. Dependence of V
13V
12V
11V
10V
9V
8V
7V
Fig. 6. Input Admittance
6
Junction Temperature
25
6
T
J
IXXN110N65C4H1
- Degrees Centigrade
8
V
I
50
V
C
CE
GE
I
= 220A
C
I
10
- Volts
C
= 110A
7
- Volts
T
= 55A
J
75
= - 40ºC
12
25ºC
CE(sat)
100
8
14
on
125
16
T
J
J
9
= 25ºC
= 150ºC
150
18
175
20
10