IXXN110N65C4H1 Ixys, IXXN110N65C4H1 Datasheet - Page 3

• Manufacturer Part Number: IXXN110N65C4H1
• Description: IGBT Modules 650V/234A Trench IGBT GenX4 XPT
• Manufacturer: Ixys

Specifications of IXXN110N65C4H1

• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.98 V
• Continuous Collector Current At 25 C: 210 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 750 W
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-227B-4
• Maximum Gate Emitter Voltage: 20 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT

© 2012 IXYS CORPORATION, All Rights Reserved
200
160
120
200
160
120
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
40
80
40
0
0
0
8
0
0.5
Fig. 3. Output Characteristics @ T
0.5
Fig. 1. Output Characteristics @ T
9
Fig. 5. Collector-to-Emitter Voltage vs.
1
10
1
Gate-to-Emitter Voltage
1.5
V
1.5
CE
11
V
V
2
CE
GE
- Volts
- Volts
- Volts
2.5
V
12
2
GE
V
GE
= 15V
= 15V
14V
13V
14V
13V
12V
3
I
2.5
13
C
J
J
= 220A
= 150ºC
110A
= 25ºC
3.5
55A
T
J
14
= 25ºC
3
4
11V
10V
8V
9V
7V
12V
10V
11V
9V
8V
7V
4.5
3.5
15
300
250
200
150
100
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
90
80
70
60
50
40
30
20
10
0
0
-50
0
4
V
GE
Fig. 2. Extended Output Characteristics @ T
V
GE
= 15V
2
-25
14V
= 15V
5
4
0
Fig. 4. Dependence of V
13V
12V
11V
10V
9V
8V
7V
Fig. 6. Input Admittance
6
Junction Temperature
25
6
T
J
IXXN110N65C4H1
- Degrees Centigrade
8
V
I
50
V
C
CE
GE
I
= 220A
C
I
10
- Volts
C
= 110A
7
- Volts
T
= 55A
J
75
= - 40ºC
12
25ºC
CE(sat)
100
8
14
on
125
16
T
J
J
9
= 25ºC
= 150ºC
150
18
175
20
10