PESD1LIN,135 NXP Semiconductors, PESD1LIN,135 Datasheet - Page 4

• Manufacturer Part Number: PESD1LIN,135
• Description: TVS Diodes - Transient Voltage Suppressors LIN-BUS ESD PROTECT
• Manufacturer: NXP Semiconductors
• Series: PESD1LINr

Specifications of PESD1LIN,135

• Rohs: yes
• Polarity: Bidirectional
• Channels: 1 Channel
• Factory Pack Quantity: 10000
• Termination Style: SMD/SMT

NXP Semiconductors
6. Characteristics
PESD1LIN
Product data sheet
Fig 3.
P
(W)
PP
10
10
10
10
4
3
2
1
T
pulse duration; typical values
Peak pulse power as a function of exponential
amb
= 25 C
10
Table 8.
T
[1]
Symbol
V
I
V
C
V
r
RM
dif
amb
RWM
BR
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
10
= 25
2

C unless otherwise specified.
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
Characteristics
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
10
3
All information provided in this document is subject to legal disclaimers.
006aaa164
t
p
(μs)
10
4
Rev. 3 — 31 May 2011
V
V
I
V
I
I
I
I
Conditions
I
I
Fig 4.
R
PP
PP
PP
PP
R
R
RWM
RWM
R
P
= 5 mA
= 1 mA
= 1 mA
PP(25°C)
= 0 V; f = 1 MHz
= 1 A
= 5 A
= 1 A
= 3 A
P
PP
= 15 V
= 24 V
1.2
0.8
0.4
0
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
50
[1]
LIN-bus ESD protection diode
Min
-
-
-
-
17.1
25.4
-
-
-
-
-
-
-
100
Typ
-
-
< 1
< 1
18.9
27.8
13
-
-
-
-
-
-
PESD1LIN
150
© NXP B.V. 2011. All rights reserved.
001aaa193
T
j
Max
15
24
50
50
20.3
30.3
17
25
44
40
70
225
300
(°C)
200
V
V
V
V
Unit
nA
nA
pF
V
V
V
V


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