STGFW30NC60V STMicroelectronics, STGFW30NC60V Datasheet - Page 5

• Manufacturer Part Number: STGFW30NC60V
• Description: IGBT Transistors 40 A 600V Very Fast High Freq 50KHz IGBT
• Manufacturer: STMicroelectronics

Specifications of STGFW30NC60V

• Product Category: IGBT Transistors
• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 36 A
• Power Dissipation: 80 W
• Package / Case: TO-3-PF
• Mounting Style: Through Hole

STGFW30NC60V
Table 6.
Table 7.
1. Turn-off losses include also the tail of the collector current
Symbol
Symbol
(di/dt)
(di/dt)
t
t
E
E
t
t
t
t
r
r
d
d
(V
(V
d(on)
d(on)
E
E
E
E
off
off
(
(
t
t
t
t
off
off
on
on
r
r
f
f
off
off
ts
ts
(1)
(1)
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Switching on/off (inductive load)
Switching energy (inductive load)
Parameter
Parameter
Doc ID 023105 Rev 1
V
R
(see Figure 18)
V
R
T
V
R
(see Figure 16)
V
R
T
V
R
(see Figure 18)
V
R
T
C
CC
CC
G
G
CC
CC
C
cc
cc
C
G
G
G
G
= 125 °C
= 125 °C
=125 °C
= 3.3 Ω, V
= 3.3 Ω, V
= 3.3 Ω, V
= 3.3 Ω, V
=3.3 Ω, V
= 3.3 Ω, V
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
Test conditions
Test conditions
(see Figure 18)
(see Figure 18)
(see Figure 16)
GE
GE
GE
GE
GE
C
C
GE
C
C
C
C
= 20 A,
= 20 A,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
=15 V,
= 20 A
= 20 A
= 20 A
= 20 A
= 15 V
Electrical characteristics
Min.
Min.
1600
1500
Typ.
11.5
1220
Typ.
100
150
130
220
330
550
450
770
31
11
31
28
75
66
Max.
Max.
A/µs
A/µs
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
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