IRGP4640DPBF International Rectifier, IRGP4640DPBF Datasheet - Page 3

• Manufacturer Part Number: IRGP4640DPBF
• Description: IGBT Transistors 600V UltraFast IGBT 40A 250W 75nC
• Manufacturer: International Rectifier

Specifications of IRGP4640DPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Continuous Collector Current Ic Max: 65 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

Fig. 1 - Maximum DC Collector Current vs.
1000
Fig. 5 - Typ. IGBT Output Characteristics
100
0.1
70
60
50
40
30
20
10
10
90
80
70
60
50
40
30
20
10
0
1
0
T
25
1
0
C
Tc = 25°C
Tj = 175°C
Single Pulse
= 25°C, T
1
T
Fig. 3 - Forward SOA
50
Case Temperature
J
= -40°C; tp = 80μs
10
2
75
J

3
V CE (V)
175°C; V
V CE (V)
T C (°C)
100
100
4
5
125
GE
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
1000
100μsec
10μsec
1msec
DC
=15V
6
150
7
10000
175
8
1000
Fig. 6 - Typ. IGBT Output Characteristics
300
250
200
150
100
100
50
90
80
70
60
50
40
30
20
10
10
Fig. 2 - Power Dissipation vs. Case
0
0
1
25
10
0
Fig. 4 - Reverse Bias SOA
T
1
T
J
50
J
= 175°C; V
= 25°C; tp = 80μs
Temperature
2
75
3
V CE (V)
V CE (V)
T C (°C)
100
100
GE
4
=20V
5
125
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
150
7
1000
175
8