IRGP4640DPBF International Rectifier, IRGP4640DPBF Datasheet - Page 2

• Manufacturer Part Number: IRGP4640DPBF
• Description: IGBT Transistors 600V UltraFast IGBT 40A 250W 75nC
• Manufacturer: International Rectifier

Specifications of IRGP4640DPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Continuous Collector Current Ic Max: 65 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

Notes:

‚
ƒ
„
Electrical Characteristics @ T
V
 V
V
V
 V
gfe
I
V
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
SCSOA
Erec
t
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
ies
oes
res
g
ge
gc
(BR )CE S
G E (th)
V
Refer to AN-1086 for guidelines for measuring V
Pulse width limited by max. junction temperature.
R
CC

is measured at T
/  T J
= 80% (V
/  T
J
CES
Colle ctor-to-Em itte r Bre a kd ow n Volta g e
T emperature Coeff. of B reakdow n Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
), V
GE
J
of approximately 90°C.
= 20V, L = 100μH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 10
(BR)CES
safely.
Min.
Min.
600
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
5
1260
1490
Typ.
Typ.
0.30
1.60
1.90
2.00
1.80
1.28
775
115
600
715
104
420
840
125
129
621
-18
2.0
17
50
13
21
41
22
29
40
24
39
45
89
37
—
—
—
—
Max.
Max.
1.90
±100
201
700
901
115
6.5
2.6
25
75
20
31
53
31
41
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
Units
Units
V/°C
nC
μA
nA
μJ
ns
μJ
ns
pF
μs
μJ
ns
V
V
V
S
V
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
I
R
E nergy los s es include tail & diode revers e recovery
I
R
I
R
E nergy los s es include tail & diode revers e recovery
I
R
T
V
V
f = 1.0Mhz
T
V
Rg = 10, V
V
Rg = 10, V
T
V
V
C
C
C
F
F
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
J
GE
CC
J
CC
CC
J
CC
GE
G
G
G
G
= 24A
= 24A, T
= 24A, V
= 24A, V
= 24A, V
= 24A
= 24A, V
= 24A, V
= 24A, V
= 24A, V
=10, L= 200μH, L
= 175°C
= 175°C, I
= 175°C
= 10, L = 200μH, L
= 10, L = 200μH, L
= 10, L = 200μH, L
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 15V
= 400V
= 0V
= 30V
= 480V, Vp =600V
= 400V, Vp =600V
= 400V, I
= 15V, Rg = 10, L =200μH, L
Conditions
GE
GE
, I
, I
C
C
J
GE
GE
GE
CC
CC
CC
CC
C
C
CE
CE
C
= 175°C
= 100μA
= 1mA (25°C-175°C)
GE
GE
C
= 700μA
= 1.0mA (25°C - 175°C)
F
= 15V, T
= 15V, T
= 15V, T
= 24A, PW = 80μs
= 400V, V
= 400V, V
= 400V, V
= 400V, V
= 600V
= 600V, T
= 96A
= 24A
= +20V to 0V
= +15V to 0V
Conditions
S
J
J
J
=150nH, T
GE
GE
GE
GE
= 25°C
= 150°C
= 175°C
S
S
S
J
= 150nH, T
= 150nH, T
= 150nH
= 175°C
=15V
= 15V
= 15V
= 15V
J
s
= 175°C
= 150nH
J
J
= 25°C
= 25°C