SS16 F3 Taiwan Semiconductor, SS16 F3 Datasheet

SS16 F3

Manufacturer Part Number

SS16 F3

Description

Schottky Diodes & Rectifiers 1.0 Amp 60 Volt 30 Amp IFSM

Manufacturer

Taiwan Semiconductor

Datasheet

1.SS14_F3.pdf (2 pages)

Specifications of SS16 F3

Product Category

Schottky Diodes & Rectifiers

Rohs

yes

Part # Aliases

F3 SS16

Current page: 1 of 2
Download datasheet (126Kb)

Features

Mechanical Data

Maximum Ratings and Electrical Characteristics

Rating at 25

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

at T

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

Maximum Instantaneous Forward Voltage

(Note 1)

Maximum DC Reverse Current

Rated DC Blocking Voltage

Maximum DC Reverse Current at VR=33V

Typical Junction Capacitance (Note 3)

Typical Thermal Resistance ( Note 2 )

Operating Temperature Range

Storage Temperature Range

Notes:

Type Number

=50

(See Fig. 1)

For surface mounted application

Easy pick and place

Metal to silicon rectifier, majority carrier conduction

Low power loss, high efficiency

High current capability, low VF

High surge current capability

Plastic material used carriers Underwriters

Laboratory Classification 94V-0

Epitaxial construction

High temperature soldering:

260

High reliability grade (AEC Q101 qualified)

Case: JEDEC SMA/DO-214AC Molded plastic

Terminals: Pure tin plated, lead free

Polarity: Indicated by cathode band

Packaging: 12mm tape per EIA STD RS-481

Weight: 0.066 gram

C / 10 seconds at terminals

1. Pulse Test with PW=300 usec, 1% Duty Cycle

2. Measured on P.C.Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.

3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

IF= 1.0A @ 25

C ambient temperature unless otherwise specified.

@ 100

@ T

=125

=25

1.0 AMP. Surface Mount Schottky Barrier Rectifiers

C at

Symbol SS

FSM

(AV)

RRM

RMS

STG

ΘJL

θJA

- 32 -

-65 to +125

0.5

0.4

Dimensions in inches and (millimeters)

0.4

-65 to +150

SMA/DO-214AC

0.75

0.65

1.0

5.0

-65 to +150

SS12 - SS115

0.80

0.70

5.0

100 150

110

0.1

2.0

0.95

0.85

115

105

Version: D08

Units

C/W

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SS16 F3 Summary of contents

Page 1

Features For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction ...

Page 2

RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS115) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1.0 SS12- SS14 0.5 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 100 110 120 130 o LEAD TEMPERATURE ...

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