MT46V8M16TG-6T L:D TR Micron Technology Inc, MT46V8M16TG-6T L:D TR Datasheet - Page 65

• Manufacturer Part Number: MT46V8M16TG-6T L:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V8M16TG-6T L:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1042-2

Figure 37:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
Consecutive WRITE-to-WRITE
Notes:
t
DQSS (NOM)
COMMAND
ADDRESS
1. DI b (or n) = data-in from column b (or column n).
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
DQS
CK#
DM
DQ
CK
WRITE
Bank,
Col b
T0
t
DQSS
NOP
DI
T1
b
65
T1n
WRITE
Bank,
Col n
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T2n
128Mb: x4, x8, x16 DDR SDRAM
T3
NOP
DI
n
DON’T CARE
T3n
©2004 Micron Technology, Inc. All rights reserved.
T4
NOP
TRANSITIONING DATA
T4n
Operations
T5
NOP