MR0A08BYS35 EverSpin Technologies Inc, MR0A08BYS35 Datasheet - Page 8
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MR0A08BYS35
Manufacturer Part Number
MR0A08BYS35
Description
IC MRAM 1MBIT 35NS 44TSOP
Manufacturer
EverSpin Technologies Inc
Datasheet
1.MR0A08BYS35.pdf
(15 pages)
Specifications of MR0A08BYS35
Format - Memory
RAM
Memory Type
MRAM (Magnetoresistive RAM)
Memory Size
1M (128K x 8)
Speed
35ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-TSOP II
Word Size
8b
Organization
128Kx8
Density
1Mb
Interface Type
Parallel
Access Time (max)
35ns
Operating Supply Voltage (typ)
3.3V
Operating Temperature Classification
Commercial
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 70C
Pin Count
44
Mounting
Surface Mount
Supply Current
65mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Other names
819-1002
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MR0A08BYS35R
Manufacturer:
EVERSPIN
Quantity:
20 000
Everspin Technologies © 2009
Timing Specifications
Read Mode
1
2
3
Addresses valid before or at the same time E goes low.
Parameter
Read cycle time
Address access time
Enable access time
Output enable access time
Output hold from address change
Enable low to output active
Output enable low to output active
Enable high to output Hi-Z
Output enable high to output Hi-Z
W is high for read cycle. Power supplies must be properly grounded and decoupled, and bus contention conditions must be
minimized or eliminated during read or write cycles.
This parameter is sampled and not 100% tested. Transition is measured ±200 mV from the steady-state voltage.
2
3
3
3
3
Table 3.3 Read Cycle Timing
Figure 3.3A Read Cycle 1
Figure 3.3B Read Cycle 2
8
Symbol
t
t
t
t
t
t
t
t
t
AVAV
AVQV
ELQV
GLQV
AXQX
ELQX
GLQX
EHQZ
GHQZ
Document Number: MR0A08B Rev. 2, 6/2009
Min
35
-
-
-
3
3
0
0
0
1
Max
-
35
35
15
-
-
-
15
10
MR0A08B
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns