MR0A08BYS35 EverSpin Technologies Inc, MR0A08BYS35 Datasheet - Page 8

• Manufacturer Part Number: MR0A08BYS35
• Description: IC MRAM 1MBIT 35NS 44TSOP
• Manufacturer: EverSpin Technologies Inc

Specifications of MR0A08BYS35

• Format - Memory: RAM
• Memory Type: MRAM (Magnetoresistive RAM)
• Memory Size: 1M (128K x 8)
• Speed: 35ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Word Size: 8b
• Organization: 128Kx8
• Density: 1Mb
• Interface Type: Parallel
• Access Time (max): 35ns
• Operating Supply Voltage (typ): 3.3V
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 70C
• Pin Count: 44
• Mounting: Surface Mount
• Supply Current: 65mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant
• Other names: 819-1002

Everspin Technologies © 2009
Timing Specifications
Read Mode
1
2
3
Addresses valid before or at the same time E goes low.
Parameter
Read cycle time
Address access time
Enable access time
Output enable access time
Output hold from address change
Enable low to output active
Output enable low to output active
Enable high to output Hi-Z
Output enable high to output Hi-Z
W is high for read cycle. Power supplies must be properly grounded and decoupled, and bus contention conditions must be
minimized or eliminated during read or write cycles.
This parameter is sampled and not 100% tested. Transition is measured ±200 mV from the steady-state voltage.
2
3
3
3
3
Table 3.3 Read Cycle Timing
Figure 3.3A Read Cycle 1
Figure 3.3B Read Cycle 2
8
Symbol
t
t
t
t
t
t
t
t
t
AVAV
AVQV
ELQV
GLQV
AXQX
ELQX
GLQX
EHQZ
GHQZ
Document Number: MR0A08B Rev. 2, 6/2009
Min
35
-
-
-
3
3
0
0
0
1
Max
-
35
35
15
-
-
-
15
10
MR0A08B
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns