CY7C1512AV18-200BZXC Cypress Semiconductor Corp, CY7C1512AV18-200BZXC Datasheet - Page 10

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CY7C1512AV18-200BZXC

Manufacturer Part Number
CY7C1512AV18-200BZXC
Description
IC SRAM 72MBIT 200MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp

Specifications of CY7C1512AV18-200BZXC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (4M x 18)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1512AV18-200BZXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1512AV18-200BZXC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Document #: 38-05565 Rev. *E
Write Cycle Descriptions
BWS
0,
H
H
H
H
L
L
L
L
NWS
0
BWS
1,
H
H
H
H
L
L
L
L
NWS
1
L-H
L-H
L-H
L-H
K
(CY7C1517V18 and CY7C1528V18)
L-H During the Data portion of a Write sequence :
L-H During the Data portion of a Write sequence :
L-H During the Data portion of a Write sequence :
L-H No data is written into the devices during this portion of a Write operation.
K
During the Data portion of a Write sequence :
CY7C1517V18 − both nibbles (D
CY7C1528V18 − both bytes (D
CY7C1517V18 − both nibbles (D
CY7C1528V18 − both bytes (D
During the Data portion of a Write sequence :
CY7C1517V18 − only the lower nibble (D
unaltered,
CY7C1528V18 − only the lower byte (D
unaltered.
CY7C1517V18 − only the lower nibble (D
unaltered,
CY7C1528V18 − only the lower byte (D
unaltered.
During the Data portion of a Write sequence :
CY7C1517V18 − only the upper nibble (D
unaltered,
CY7C1528V18 − only the upper byte (D
unaltered.
CY7C1517V18 − only the upper nibble (D
unaltered,
CY7C1528V18 − only the upper byte (D
unaltered.
No data is written into the devices during this portion of a Write operation.
[3, 9]
[17:0]
[17:0]
[7:0]
[7:0]
) are written into the device.
) are written into the device.
) are written into the device,
) are written into the device,
Comments
[8:0]
[8:0]
[17:9]
[17:9]
[3:0]
[3:0]
[7:4]
[7:4]
) is written into the device. D
) is written into the device. D
) is written into the device. D
) is written into the device. D
) is written into the device. D
) is written into the device. D
) is written into the device. D
) is written into the device. D
CY7C1517V18
CY7C1528V18
CY7C1519V18
CY7C1521V18
[17:9]
[17:9]
[8:0]
[8:0]
[7:4]
[7:4]
[3:0]
[3:0]
Page 10 of 28
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