CY7C138-25JXI Cypress Semiconductor Corp, CY7C138-25JXI Datasheet - Page 9

IC SRAM 32KBIT 25NS 68PLCC

CY7C138-25JXI

Manufacturer Part Number
CY7C138-25JXI
Description
IC SRAM 32KBIT 25NS 68PLCC
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY7C138-25JXI

Memory Size
32K (4K x 8)
Package / Case
68-PLCC
Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Speed
25ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Access Time
25 ns
Maximum Clock Frequency
1 MHz
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
180 mA
Organization
4 K x 8
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
2
Operating Supply Voltage
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C138-25JXI
Manufacturer:
Cypress Semiconductor
Quantity:
135
Part Number:
CY7C138-25JXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Notes
Document #: 38-06037 Rev. *G
24. The internal write time of the memory is defined by the overlap of CE or SEM LOW and R/W LOW. Both signals must be LOW to initiate a write, and either signal can
25. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of t
26. R/W must be HIGH during all address transitions.
27. Data I/O pins enter high impedance when OE is held LOW during write.
SEM OR CE
SEM OR CE
terminate a write by going HIGH. The data input setup and hold timing should be referenced to the rising edge of the signal that terminates the write.
placed on the bus for the required t
be as short as the specified t
Data Out
Address
Data Out
Address
Data In
Data In
R/W
R/W
OE
Figure 7. Write Cycle No. 2: R/W Three-States Data I/Os (Either Port)
Figure 6. Write Cycle No. 1: OE Three-States Data I/Os (Either Port)
PWE
.
SD
. If OE is HIGH during a R/W controlled write cycle (as in this example), this requirement does not apply and the write pulse can
(continued)
t
SA
t
t
HZOE
SA
t
SCE
t
SCE
t
AW
t
High Impedance
AW
t
HZWE
t
WC
t
WC
t
PWE
t
PWE
PWE
t
SD
Data Valid
t
SD
or (t
High Impedance
Data Valid
HZWE
+ t
SD
) to allow the I/O drivers to turn off and data to be
t
HD
t
t
HD
LZWE
t
HA
[24, 25, 26]
t
LZOE
[24, 26, 27]
t
HA
CY7C138
Page 9 of 21
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