CY14B104N-ZS25XI Cypress Semiconductor Corp, CY14B104N-ZS25XI Datasheet - Page 8

• Manufacturer Part Number: CY14B104N-ZS25XI
• Description: IC NVSRAM 4MBIT 25NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B104N-ZS25XI

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4M (256K x 16)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Retention and Endurance
Capacitance
In the following table, the capacitance parameters are listed.
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
AC Test Conditions
Input Pulse Levels.................................................... 0V to 3V
Input Rise and Fall Times (10% - 90%)........................ <3 ns
Input and Output Timing Reference Levels.................... 1.5V
Note
DATA
NV
C
C
13. These parameters are guaranteed but not tested.
Parameter
Document #: 001-07102 Rev. *L
IN
OUT
C
Θ
Θ
R
JA
JC
OUTPUT
Parameter
Parameter
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
3.0V
Description
30 pF
Input Capacitance
Output Capacitance
Data Retention
Nonvolatile STORE Operations
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, in accordance with EIA/JESD51.
577Ω
R1
Description
789Ω
Figure 5. AC Test Loads
Test Conditions
Description
R2
[13]
OUTPUT
[13]
T
V
A
CC
3.0V
= 25°C, f = 1 MHz,
= 0 to 3.0V
Test Conditions
5 pF
48-FBGA 44-TSOP II 54-TSOP II
28.82
7.84
CY14B104L, CY14B104N
Min
200
577Ω
20
R1
31.11
5.56
Max
7
7
for tri-state specs
789Ω
30.73
R2
6.08
Unit
Page 8 of 25
pF
pF
Years
Unit
K
°C/W
°C/W
Unit
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