CY7C1360A-150BGC Cypress Semiconductor Corp, CY7C1360A-150BGC Datasheet - Page 14
![IC SRAM 9MBIT 150MHZ 119BGA](/photos/7/26/72689/cy7c1360a-150bgc_sml.jpg)
CY7C1360A-150BGC
Manufacturer Part Number
CY7C1360A-150BGC
Description
IC SRAM 9MBIT 150MHZ 119BGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1360A-150BGC.pdf
(28 pages)
Specifications of CY7C1360A-150BGC
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
150MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
119-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1115
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1360A-150BGC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05258 Rev. *C
TAP Electrical Characteristics
V
V
IL
IL
IL
V
V
V
V
Notes:
Parameter
12. X = 69 for the x36 configuration;
13. All voltage referenced to V
14. Overshoot: V
15. This parameter is sampled.
TDI
IH
Il
OLC
OHC
OLT
OHT
I
I
O
X = 50 for the x18 configuration.
t < 200 ms. During normal operation, V
t
KHKL
TDI
TDI
(min.).
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
TMS and TDI Input Leakage Current
Output Leakage Current
LVCMOS Output Low Voltage
LVCMOS Output High Voltage
LVTTL Output Low Voltage
LVTTL Output High Voltage
IH
(AC) < V
Selection
Circuitry
CC
SS
Description
1.5V for t < t
(GND).
CCQ
KHKH
must not exceed V
(20°C < T
/2; undershoot: V
[13]
[13, 14]
[13]
Figure 2. TAP Controller Block Diagram
[13, 14]
31
x
[13, 15]
[13, 15]
30
Identification Register
.
j
< 110°C; V
TAP Controller
Instruction Register
29
.
0V < V
0V < V
Output disabled,
0V < V
I
I
I
I
CC
OLC
OHC
OLT
OHT
IL
Boundary Scan Register
(AC) < – 0.5V for t < t
. Control input signals (such as R/W, ADV/LD, etc.) may not have pulse widths less than
= 8.0 mA
= 100 A
= 8.0 mA
= 100 A
Test Conditions
.
.
IN
IN
IN
CC
Bypass Register
< VCC
< VCC
< V
.
.
= 3.3V –0.2V and +0.3V unless otherwise noted)
CCQ
2
2
2
KHKH
1
1
1
/2; power-up: V
0
0
0
0
[12]
V
IH
CC
Min.
–0.3
–5.0
–5.0
< 3.6V and V
–30
2.0
2.4
– 0.2
Selection
Circuitry
CC
< 3.135V and V
V
CY7C1360A
CY7C1362A
CC
Max.
0.8
5.0
5.0
0.2
0.4
30
+ 0.3
Page 14 of 28
CCQ
< 1.4V for
TDO
Unit
V
V
V
V
V
V
A
A
A