IS61LPS12836A-200TQLI ISSI, Integrated Silicon Solution Inc, IS61LPS12836A-200TQLI Datasheet - Page 13

IC SRAM 4MBIT 200MHZ 100TQFP

IS61LPS12836A-200TQLI

Manufacturer Part Number
IS61LPS12836A-200TQLI
Description
IC SRAM 4MBIT 200MHZ 100TQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
Synchronousr
Datasheet

Specifications of IS61LPS12836A-200TQLI

Memory Size
4M (128K x 36)
Package / Case
100-TQFP, 100-VQFP
Interface
Parallel
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
200MHz
Voltage - Supply
3.135 V ~ 3.465 V
Operating Temperature
-40°C ~ 85°C
Access Time
3.1 ns
Maximum Clock Frequency
200 MHz
Supply Voltage (max)
3.465 V
Supply Voltage (min)
3.135 V
Maximum Operating Current
210 mA
Organization
128 K x 36
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
4
Operating Supply Voltage
2.5 V to 3.3 V
Density
4.5Mb
Access Time (max)
3.1ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
200MHz
Operating Supply Voltage (typ)
3.3V
Address Bus
17b
Package Type
TQFP
Operating Temp Range
-40C to 85C
Supply Current
210mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.465V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
100
Word Size
36b
Number Of Words
128K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
706-1098
IS61LPS12836A-200TQLI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61LPS12836A-200TQLI
Manufacturer:
ISSI
Quantity:
326
Part Number:
IS61LPS12836A-200TQLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS61LPS12836A-200TQLI
Manufacturer:
ISSI
Quantity:
20 000
Part Number:
IS61LPS12836A-200TQLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61(64)LPS12832A
IS61(64)LPS12836A IS61(64)VPS12836A
IS61(64)LPS25618A IS61(64)VPS25618A
POWER SUPPLY CHARACTERISTICS
Note:
1. MODE pin has an internal pullup and should be tied to V
2. Typical values are measured at V
Integrated Silicon Solution, Inc.
Rev. H
01/07/2010
Symbol Parameter
I
I
I
CC
SB
SBI
V
SS
+ 0.2V or ≥ V
AC Operating
Supply Current
Standby Current
TTL Input
Standby Current
CMOS Input
DD
– 0.2V.
Test Conditions
Device Selected,
OE = V
≥ V
Cycle Time ≥ t
Device Deselected,
V
All Inputs ≤ V
ZZ ≤ V
Device Deselected,
V
V
≥V
All Inputs ≤ 0.2V or
f = 0
DD
DD
IN
DD
DD
≤ V
= Max.,
= Max.,
– 0.2V
DD
– 0.2V,
IL
IH
SS
, f = Max.
, ZZ ≤ V
= 3.3V, T
+ 0.2V or
IL
KC
or ≥ V
IL
min.
,
A
IH
= 25
,
(1)
o
C and not 100% tested.
(Over Operating Range)
Temp. range
DD
Com.
Com.
Com.
Auto.
Auto.
Auto.
typ.
Ind.
Ind.
Ind.
or V
(2)
SS
. It exhibits ±100µA maximum leakage current when tied to ≤
225
250
275
100
120
x18
90
70
75
90
-250
MAX
40
x32/x36
225
250
275
100
120
90
70
75
90
200
210
225
100
120
x18
90
70
75
90
-200
MAX
40
x32/x36
200
210
225
100
120
90
70
75
90
Unit
mA
mA
mA
13

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