NSVBAT54HT1G ON Semiconductor, NSVBAT54HT1G Datasheet - Page 2

• Manufacturer Part Number: NSVBAT54HT1G
• Description: Schottky Diodes & Rectifiers SS SCHOTTKY DIODE
• Manufacturer: ON Semiconductor

Specifications of NSVBAT54HT1G

• Rohs: yes
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 200 mA
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.35 V
• Maximum Power Dissipation: 200 mW
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOD-323
• Maximum Diode Capacitance: 10 pF

ELECTRICAL CHARACTERISTICS
+10 V
Reverse Breakdown Voltage
Total Capacitance
Reverse Leakage
Forward Voltage
Forward Voltage
Forward Voltage
Reverse Recovery Time
Forward Voltage
Forward Voltage
(I
(V
(V
(I
(I
(I
(I
(I
(I
50  Output
R
F
F
F
F
F
F
Generator
R
R
= 0.1 mAdc)
= 30 mAdc)
= 100 mAdc)
= I
= 1.0 mAdc)
= 10 mAdc)
= 10 A)
= 1.0 V, f = 1.0 MHz)
= 25 V)
Pulse
R
820
= 10 mAdc, I
0.1 F
2 k
100 H
R(REC)
Characteristic
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
Notes:
Notes:
= 1.0 mAdc) Figure 1
I
F
DUT
2. Input pulse is adjusted so I
3. t
Figure 1. Recovery Time Equivalent Test Circuit
p
» t
(T
A
rr
= 25C unless otherwise noted)
0.1 F
Oscilloscope
50  Input
Sampling
http://onsemi.com
R(peak)
2
V
R
is equal to 10 mA.
t
r
Symbol
INPUT SIGNAL
V
(BR)R
C
V
V
V
V
V
I
t
R
rr
F
F
F
F
F
10%
90%
T
t
p
Min
30
t
−
−
−
−
−
−
−
−
F
) of 10 mA.
I
I
R
F
0.22
0.41
0.52
0.29
0.35
Typ
7.6
0.5
−
−
(I
F
= I
at i
OUTPUT PULSE
R
= 10 mA; measured
R(REC)
Max
0.24
0.32
0.40
2.0
0.5
0.8
5.0
10
t
−
rr
i
R(REC)
= 1 mA)
= 1 mA
Adc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
ns
t
V