BAT54HT1G,
NSVBAT54HT1G
Schottky Barrier Diodes
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 Minimum Pad
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Reverse Voltage
Total Device Dissipation FR−5 Board,
(Note 1)
Forward Current (DC)
Non−Repetitive Peak Forward Current,
Repetitive Peak Forward Current
Thermal Resistance
Junction and Storage Temperature Range
These Schottky barrier diodes are designed for high speed switching
Unique Site and Control Change Requirements
Compliant*
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ I
Device Marking: JV
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
T
Derate above 25C
t
Pulse Wave = 1 sec, Duty Cycle = 66%
Junction−to−Ambient
p
A
< 10 msec
= 25C
Characteristic
Rating
(T
J
= 125C unless otherwise noted)
Symbol
Symbol
T
F
R
I
I
J
FSM
FRM
V
P
= 10 mAdc
, T
I
qJA
F
R
D
stg
Value
to150
Max
1.57
Max
200
200
600
300
635
−55
30
1
mW/C
C/W
Unit
Unit
mW
mA
mA
mA
C
V
†For information on tape and reel specifications,
BAT54HT1G
NSVBAT54HT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
HOT−CARRIER DETECTOR
AND SWITCHING DIODES
(Note: Microdot may be in either location)
Device
ORDERING INFORMATION
JV
M
G
30 VOLT SILICON
CATHODE
MARKING DIAGRAM
http://onsemi.com
1
1
= Device Code
= Date Code
= Pb−Free Package
CASE 477
SOD−323
STYLE 1
(Pb−Free)
(Pb−Free)
SOD−323
SOD−323
Package
JVM G
Publication Order Number:
G
ANODE
2
2
Tape & Reel
Tape & Reel
Shipping
BAT54HT1/D
3,000 /
3,000 /
†