HYB25D512800CE-6 Qimonda, HYB25D512800CE-6 Datasheet - Page 38

• Manufacturer Part Number: HYB25D512800CE-6
• Description: IC DDR SDRAM 512MBIT 66TSOP
• Manufacturer: Qimonda

Specifications of HYB25D512800CE-6

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 675-1008-2

7
For reference the Qimonda SDRAM component nomenclature is enclosed in this chapter.
Rev. 1.41, 2007-12
03292006-3TFJ-HNV3
Example for
DDR SDRAM
Field Description
1
2
3
4
5
6
7
8
9
10
Qimonda Component Prefix
Interface Voltage [V]
DRAM Technology
Component Density [Mbit]
Number of I/Os
Product Variations
Die Revision
Package,
Lead-Free Status
Power
Speed Grade
Product Nomenclature
Field Number
1
HYB
2
25
Values
HYB
HYI
25
D
64
128
256
512
40
80
16
0 .. 9
A
B
C
D
C
E
F
T
–
–4
–4A
–5
–5A
–6
3
D
Coding
Memory components
Memory components, industrial temperature range (-40°C – +85 °C)
2.5 V
Double Data Rate SDRAM
64 Mbit
128 Mbit
256 Mbit
512 Mbit
×4
×8
×16
look up table
First
Second
Third
Fourth
FBGA, lead containing
TSOP, lead- and halogen-free
FBGA, lead- and halogen-free
TSOP, lead containing
Standard power product
DDR500B
DDR500A
DDR400B
DDR400A
DDR333B
Date: 2007-12-13
4
512
38
5
80
6
0
HY[B/I]25D512[40/80/16]0C[C/E/F/T](L)
Example for Nomenclature Fields
512-Mbit Double-Data-Rate SDRAM
7
D
DDR Memory Components
8
E
Internet Data Sheet
9
TABLE 26
TABLE 27
10
–4