HYB25D512800CE-6 Qimonda, HYB25D512800CE-6 Datasheet - Page 26

• Manufacturer Part Number: HYB25D512800CE-6
• Description: IC DDR SDRAM 512MBIT 66TSOP
• Manufacturer: Qimonda

Specifications of HYB25D512800CE-6

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 675-1008-2

5
This chapter describes the electrical characteristics.
5.1
This chapter contains the operating conditions tables.
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to
Rev. 1.41, 2007-12
03292006-3TFJ-HNV3
Parameter
Voltage on I/O pins relative to
Voltage on inputs relative to
Voltage on
Voltage on
Operating temperature (ambient)
Storage temperature (plastic)
Power dissipation (per SDRAM component)
Short circuit output current
absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated
circuit.
V
V
DD
DDQ
supply relative to
supply relative to
Electrical Characteristics
Operating Conditions
V
SS
V
SS
V
V
SS
SS
Date: 2007-12-13
Symbol
V
V
V
V
T
T
P
I
OUT
A
STG
IN
IN
DD
DDQ
D
,
V
26
OUT
Min.
–0.5
–1
–1
–1
0
–40
–55
—
—
Typ.
—
—
—
—
—
—
—
1
50
HY[B/I]25D512[40/80/16]0C[C/E/F/T](L)
Values
512-Mbit Double-Data-Rate SDRAM
Max.
V
+3.6
+3.6
+3.6
+70
+85
+150
—
—
DDQ
Absolute Maximum Ratings
+ 0.5
Internet Data Sheet
Unit
V
V
V
V
°C
°C
°C
W
mA
TABLE 19
Note
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—
—
for HYB...
for HYI...
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