CAT28C64BLI12 ON Semiconductor, CAT28C64BLI12 Datasheet - Page 5

IC EEPROM 64KBIT 120NS 28DIP

CAT28C64BLI12

Manufacturer Part Number
CAT28C64BLI12
Description
IC EEPROM 64KBIT 120NS 28DIP
Manufacturer
ON Semiconductor
Datasheet

Specifications of CAT28C64BLI12

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
64K (8K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-DIP (0.600", 15.24mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
28C64BLI-12
CAT28C64BLI-12
CAT28C64BLI-12
A.C. CHARACTERISTICS, Read Cycle
V
Figure 1. A.C. Testing Input/Output Waveform(3)
Figure 2. A.C. Testing Load Circuit (example)
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
(3) Input rise and fall times (10% and 90%) < 10 ns.
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
CC
Symbol Parameter
t
t
t
t
t
t
t
t
t
RC
CE
AA
OE
LZ
OLZ
HZ
OHZ
OH
= 5V 10%, unless otherwise specified.
V CC - 0.3V
(1)
(1)(2)
(1)
(1)
(1)(2)
0.0 V
Read Cycle Time
CE Access Time
Address Access Time
OE Access Time
CE Low to Active Output
OE Low to Active Output
CE High to High-Z Output
OE High to High-Z Output
Output Hold from Address Change
INPUT PULSE LEVELS
DEVICE
UNDER
TEST
C L INCLUDES JIG CAPACITANCE
Min.
28C64B-90
90
0
0
0
1.3V
5
2.0 V
0.8 V
Max.
1N914
3.3K
C L = 100 pF
90
90
50
50
50
120
Min.
28C64B-12
0
0
0
OUT
REFERENCE POINTS
Max.
120
120
50
50
60
150
Min.
0
0
0
28C64B-15
Max.
150
150
70
50
50
Doc. No. MD-1011, Rev. I
CAT28C64B
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns

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