MR0A16ACYS35 EverSpin Technologies Inc, MR0A16ACYS35 Datasheet - Page 3

• Manufacturer Part Number: MR0A16ACYS35
• Description: IC MRAM 1MBIT 35NS 44TSOP
• Manufacturer: EverSpin Technologies Inc

Specifications of MR0A16ACYS35

• Memory Size: 1M (64K x 16)
• Format - Memory: RAM
• Memory Type: MRAM (Magnetoresistive RAM)
• Speed: 35ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Memory Configuration: 64K X 16
• Access Time: 35ns
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 44
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 819-1005; MR0A16ACYS35

Electrical Specifications
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage
greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken to
avoid application of any magnetic field more intense than the maximum field intensity specified in the
maximum ratings.
Freescale Semiconductor
NOTES:
E
H
L
L
L
L
L
L
L
L
1
2
1
H = high, L = low, X = don’t care
Hi-Z = high impedance
G
H
X
X
X
X
X
L
L
L
1
W
H
H
H
H
X
X
L
L
L
1
MR0A16A Advanced Information Data Sheet, Rev. 0
LB
X
X
H
H
H
L
L
L
L
1
UB
X
X
H
H
H
L
L
L
L
1
Table 2. Operating Modes
Not selected
Output disabled
Output disabled
Lower byte read
Upper byte read
Word read
Lower byte write
Upper byte write
Word write
Mode
I
Current
SB1
I
I
I
I
I
I
I
I
V
DDA
DDA
DDA
DDA
DDA
DDA
DDA
DDA
DD
, I
SB2
DQL[7:0]
D
D
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
D
D
Electrical Specifications
Out
Out
In
In
2
DQU[15:8]
D
D
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
D
D
Out
Out
In
In
2
3