CY7C1474BV25-167BGC Cypress Semiconductor Corp, CY7C1474BV25-167BGC Datasheet - Page 16

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CY7C1474BV25-167BGC

Manufacturer Part Number
CY7C1474BV25-167BGC
Description
IC SRAM 72MBIT 167MHZ 209FBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1474BV25-167BGC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
72M (1M x 72)
Speed
167MHz
Interface
Parallel
Voltage - Supply
2.375 V ~ 2.625 V
Operating Temperature
0°C ~ 70°C
Package / Case
209-FBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1474BV25-167BGC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1474BV25-167BGCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
2.5V TAP AC Test Conditions
Input pulse levels................................................. V
Input rise and fall time .....................................................1 ns
Input timing reference levels......................................... 1.25V
Output reference levels ................................................ 1.25V
Test load termination supply voltage ............................ 1.25V
TAP DC Electrical Characteristics And Operating Conditions
(0°C < T
Table 6. Identification Register Definitions
Table 7. Scan Register Sizes
Note
Document #: 001-15032 Rev. *D
V
V
V
V
V
V
I
Revision Number (31:29)
Device Depth (28:24)
Architecture/Memory Type(23:18)
Bus Width/Density(17:12)
Cypress JEDEC ID Code (11:1)
ID Register Presence Indicator (0)
Instruction
Bypass
ID
Boundary Scan Order–165FBGA
Boundary Scan Order–209BGA
11. All voltages refer to V
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
A
Instruction Field
< +70°C; V
SS
Register Name
DD
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
(GND).
= 2.5V ±0.125V unless otherwise noted)
Description
CY7C1470BV25
00000110100
(2M x 36)
001000
100100
01011
000
I
I
I
I
V
V
GND ≤ V
1
OH
OH
OL
OL
DDQ
DDQ
= 1.0 mA, V
= 100 μA, V
= –1.0 mA, V
= –100 μA, V
SS
= 2.5V
= 2.5V
to 2.5V
I
≤ V
CY7C1472BV25
DDQ
00000110100
Test Conditions
DDQ
DDQ
(4M x 18)
Bit Size (x36)
001000
010100
DDQ
DDQ
01011
000
[11]
1
= 2.5V
= 2.5V
= 2.5V
= 2.5V
32
71
Figure 5. 2.5V TAP AC Output Load Equivalent
3
1
CY7C1472BV25, CY7C1474BV25
CY7C1474BV25
00000110100
TDO
(1M x 72)
001000
110100
01011
000
1
Bit Size (x18)
Z = 50Ω
32
52
O
3
1
Reserved for internal use
Describes the version number
Defines memory type and archi-
tecture
Defines width and density
Allows unique identification of
SRAM vendor
Indicates the presence of an ID
register
–0.3
Min
1.7
2.1
1.7
–5
CY7C1470BV25
Description
V
1.25V
DD
Max
0.4
0.2
0.7
Bit Size (x72)
5
+ 0.3
20pF
50Ω
110
Page 16 of 29
32
3
1
Unit
μA
V
V
V
V
V
V
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