CYD09S18V18-200BBXC Cypress Semiconductor Corp, CYD09S18V18-200BBXC Datasheet - Page 44

• Manufacturer Part Number: CYD09S18V18-200BBXC
• Description: IC SRAM 9MBIT 200MHZ 256LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CYD09S18V18-200BBXC

• Memory Size: 9M (512K x 18)
• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 256-LFBGA
• Memory Configuration: 512K X 18
• Clock Frequency: 77MHz
• Access Time: 3.3ns
• Supply Voltage Range: 1.42V To 1.58V, 1.7V To 1.9V
• Memory Case Style: BGA
• No. Of Pins: 256
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-2034; CYD09S18V18-200BBXC

Ordering Information
Document Number: 38-06082 Rev. *J
256 K × 36 (9-Mbit) 1.8 V/1.5 V Synchronous CYD09S36V18 Dual Port SRAM
64 K × 36 (2-Mbit) 1.8 V or 1.5 V Synchronous CYD02S36V18 Dual Port SRAM
Speed
Speed
(MHz)
(MHz)
200
200
167
200
CYD09S36V18-200BBXC
CYD09S36V18-200BBXI
CYD09S36V18-167BBXC
CYD02S36V18-200BBC
Ordering Code
Ordering Code
(continued)
51-85108
51-85108
51-85108
51-85108
Package
Package
Diagram
Diagram
256-ball Ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Pb-free) Commercial
256-ball Ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Pb-free)
256-ball Ball Grid Array 17 mm x 17 mm with 1.0 mm pitch (Pb-free) Commercial
256-ball Ball Grid Array 17 mm x 17 mm with 1.0 mm pitch
Package Type
Package Type
Page 44 of 52
FullFlex
Commercial
Operating
Operating
Industrial
Range
Range
[+] Feedback