CYD09S18V18-200BBXC Cypress Semiconductor Corp, CYD09S18V18-200BBXC Datasheet - Page 36

• Manufacturer Part Number: CYD09S18V18-200BBXC
• Description: IC SRAM 9MBIT 200MHZ 256LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CYD09S18V18-200BBXC

• Memory Size: 9M (512K x 18)
• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 256-LFBGA
• Memory Configuration: 512K X 18
• Clock Frequency: 77MHz
• Access Time: 3.3ns
• Supply Voltage Range: 1.42V To 1.58V, 1.7V To 1.9V
• Memory Case Style: BGA
• No. Of Pins: 256
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-2034; CYD09S18V18-200BBXC

Switching Waveforms
Note
Document Number: 38-06082 Rev. *J
58. A
Address
External
Address
External
Internal
CNTEN
Address
BUSY
Readback.”
match
ADS
R /W
B En
CE
CE
C
DQ
O E
C
A
0
1
is the matching address that is reported on the address bus of the losing port. The counter operation selected for reporting the address is “Busy Address
Figure 24. Busy Address Readback for Pipelined and Flow through Modes, CNT/MSK = RET = LOW
Pipelined
Flow through
A
match+2
t
S AC
t
An
CYC
t
H AC
t
C KLZ 1
A
match+3
(continued)
t
C D 1
t
CY C
Figure 25. Read Cycle for Flow through Mode
A
An + 1
match+4
D Q n
t
~
~
~
~
~
~
~
D C
A n + 2
D Q n + 1
t
O H Z
t
CA1
t
O LZ
t
O E
A
t
match
SA C
A n + 3
D Q n + 2
t
t
H AC
AC
t
CA2
t
D C
t
C KH Z 1
A
match
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t
AC
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