CY7C1370D-200BGXC Cypress Semiconductor Corp, CY7C1370D-200BGXC Datasheet - Page 15

• Manufacturer Part Number: CY7C1370D-200BGXC
• Description: IC SRAM 18MBIT 200MHZ 119BGA
• Manufacturer: Cypress Semiconductor Corp
• Type: Synchronousr

Specifications of CY7C1370D-200BGXC

• Memory Size: 18M (512K x 36)
• Package / Case: 119-BGA
• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 3 ns
• Maximum Clock Frequency: 200 MHz
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 300 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 4
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2.5 V TAP AC Test Conditions
Input pulse levels................................................V
Input rise and fall time .....................................................1 ns
Input timing reference levels........................................ 1.25 V
Output reference levels ............................................... 1.25 V
Test load termination supply voltage ........................... 1.25 V
TAP DC Electrical Characteristics and Operating Conditions
(0 °C < T
Scan Register Sizes
Identification Register Definitions
Note
Document Number: 38-05558 Rev. *H
V
V
V
V
V
V
I
Instruction
Bypass
ID
Boundary scan order (119-ball BGA package)
Boundary scan order (165-ball FBGA package)
Revision number (31:29)
Cypress device ID (28:12)
Cypress JEDEC ID (11:1)
ID register presence (0)
11.All voltages referenced to V
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
A
Instruction Field
< +70 °C; V
Register Name
Output HIGH voltage
Output HIGH voltage
Output LOW voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input load current
DD
SS
= 2.5 V ± 0.125 V unless otherwise noted)
Description
(GND).
01011001000100101
CY7C1372DV25
I
I
I
I
GND < V
OH
OH
OL
OL
00000110100
= 8.0 mA, V
= 100 µA
= –1.0 mA, V
= –100 µA, V
SS
000
1
to 2.5 V
IN
< V
Test Conditions
Bit Size (× 18)
DDQ
DDQ
DDQ
DDQ
32
85
89
= 2.5 V
3
1
= 2.5 V
= 2.5 V
[11]
2.5 V TAP AC Output Load Equivalent
01011001000010101
V
V
V
DDQ
DDQ
DDQ
CY7C1370DV25
00000110100
= 2.5 V
= 2.5 V
= 2.5 V
TDO
000
1
Z = 50
O
Reserved for version number.
Reserved for future use.
Allows unique identification of
SRAM vendor.
Indicate the presence of an ID
register.
–0.3
Min
2.0
2.1
1.7
–5
–
–
Bit Size (× 36)
32
85
89
3
1
Description
V
CY7C1370DV25
CY7C1372DV25
1.25V
DD
Max
0.4
0.2
0.7
–
–
5
+ 0.3
20pF
50
Page 15 of 29
Unit
µA
V
V
V
V
V
V
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