M48Z08-100PC1 STMicroelectronics, M48Z08-100PC1 Datasheet

IC NVSRAM 64KBIT 100NS 28DIP

M48Z08-100PC1

Manufacturer Part Number
M48Z08-100PC1
Description
IC NVSRAM 64KBIT 100NS 28DIP
Manufacturer
STMicroelectronics
Datasheets

Specifications of M48Z08-100PC1

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
64K (8K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
4.75 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-DIP Module (600 mil), 28-EDIP
Data Bus Width
8 bit
Organization
8 Kb x 8
Interface Type
Parallel
Access Time
100 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.75 V
Operating Current
80 mA
Maximum Operating Temperature
70 C
Minimum Operating Temperature
0 C
Mounting Style
Through Hole
Capacitance, Input
10 pF
Capacitance, Output
10 pF
Current, Input, Leakage
±1 μA
Current, Operating
80 mA
Current, Output, Leakage
±1
Data Retention
11 yrs.
Density
64K
Package Type
PCDIP28
Power Dissipation
1 W
Temperature, Operating
0 to +70 °C
Time, Access
100 ns
Time, Fall
≤5 ns
Time, Rise
≤5 ns
Voltage, Input, High
5.05 to 5.8 V
Voltage, Input, Low
0.8 V
Voltage, Output, High
2.4 V
Voltage, Output, Low
0.4 V
Voltage, Supply
4.75 to 5.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2869-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M48Z08-100PC1
Manufacturer:
NXP
Quantity:
5 000
Part Number:
M48Z08-100PC1
Manufacturer:
ST
0
Part Number:
M48Z08-100PC1
Manufacturer:
ST
Quantity:
20 000
Features
May 2010
Integrated, ultra low power SRAM and power-
fail control circuit
Unlimited WRITE cycles
READ cycle time equals WRITE cycle time
Automatic power-fail chip deselect and WRITE
protection
WRITE protect voltages
(V
– M48Z08: V
– M48Z18: V
Self-contained battery in the CAPHAT™ DIP
package
Pin and function compatible with JEDEC
standard 8 K x 8 SRAMs
RoHS compliant
– Lead-free second level interconnect
PFD
4.5 V ≤ V
4.2 V ≤ V
= power-fail deselect voltage):
PFD
PFD
CC
CC
≤ 4.5 V
≤ 4.75 V
= 4.75 to 5.5 V
= 4.5 to 5.5 V
5 V, 64 Kbit (8 Kb x 8) ZEROPOWER
Doc ID 2424 Rev 7
28
Battery CAPHAT™
PCDIP28 (PC)
1
M48Z08
M48Z18
®
SRAM
www.st.com
1/20
1

Related parts for M48Z08-100PC1

M48Z08-100PC1 Summary of contents

Page 1

... READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages (V = power-fail deselect voltage): PFD – M48Z08 4. 4.5 V ≤ V ≤ 4.75 V PFD – M48Z18 4 4.2 V ≤ V ≤ 4.5 V PFD ■ ...

Page 2

... Operation modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1 READ mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 WRITE mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.3 Data retention mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.4 V noise and negative going transients . . . . . . . . . . . . . . . . . . . . . . . . . Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 7 Environmental information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2/20 Doc ID 2424 Rev 7 M48Z08, M48Z18 ...

Page 3

... M48Z08, M48Z18 List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 2. Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 3. READ mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 4. WRITE mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 5. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Table 6. Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 7. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 8. DC characteristics Table 9. Power down/up AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 10. Power down/up trip points DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 11. PCDIP28 – ...

Page 4

... Figure 6. Chip enable controlled, WRITE mode AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Figure 7. Supply voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 8. AC testing load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 9. Power down/up mode AC waveforms Figure 10. PCDIP28 – 28-pin plastic DIP, battery CAPHAT™, package outline . . . . . . . . . . . . . . . . . 16 Figure 11. Recycling symbols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4/20 Doc ID 2424 Rev 7 M48Z08, M48Z18 ...

Page 5

... DS1225. The monolithic chip provides a highly integrated battery-backed memory solution. The M48Z08/ non-volatile pin and function equivalent to any JEDEC standard SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special write timing or limitations on the number of writes that can be performed. The 28-pin, 600 mil DIP CAPHAT™ ...

Page 6

... DIP connections Figure 3. Block diagram LITHIUM CELL VOLTAGE SENSE 6/ A12 M48Z08 M48Z18 DQ0 11 18 DQ1 12 17 DQ2 POWER AND V PFD SWITCHING CIRCUITRY V CC Doc ID 2424 Rev 7 M48Z08, M48Z18 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 A0-A12 DQ0-DQ7 SRAM ARRAY AI01183 AI01394 ...

Page 7

... SO 2.1 READ mode The M48Z08/ the READ mode whenever W (WRITE enable) is high and E (chip enable) is low. The device architecture allows ripple-through access of data from eight of 65,536 locations in the static storage array. Thus, the unique address specified by the 13 address inputs defines which one of the 8,192 bytes of data accessed. Valid data will be available at the data I/O pins within address access time (t address input signal is stable, providing that the E and G access times are also satisfied ...

Page 8

... L 2.2 WRITE mode The M48Z08/ the WRITE mode whenever W and E are active. The start of a WRITE is referenced from the latter occurring falling edge WRITE is terminated by the earlier rising edge The addresses must be held valid throughout the cycle must return high for a minimum from WRITE Enable prior to the initiation of another READ or WRITE cycle ...

Page 9

... M48Z08, M48Z18 Figure 5. WRITE enable controlled, WRITE mode AC waveform A0-A12 E W DQ0-DQ7 Figure 6. Chip enable controlled, WRITE mode AC waveforms A0-A12 tAVEL E W DQ0-DQ7 tAVAV VALID tAVWH tAVEL tWLWH tAVWL tWLQZ tDVWH tAVAV VALID tAVEH tELEH tAVWL DATA INPUT tDVEH Doc ID 2424 Rev 7 ...

Page 10

... V of the power supply lines is recommended. When V drops below V CC preserves data. The internal button cell will maintain data in the M48Z08/18 for an accumulated period of at least 11 years when V As system power returns and V power supply is switched to external V (min) plus t (min) ...

Page 11

... M48Z08, M48Z18 2.4 V noise and negative going transients CC I transients, including those produced by output switching, can produce voltage CC fluctuations, resulting in spikes on the V capacitors are used to store energy which stabilizes the V bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µ ...

Page 12

... Furthermore, the devices shall not be exposed to IR reflow. Caution: Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup mode. 12/20 Parameter off, oscillator off) CC Doc ID 2424 Rev 7 M48Z08, M48Z18 Value Unit °C – °C 260 °C –0 – ...

Page 13

... M48Z08, M48Z18 4 DC and AC parameters This section summarizes the operating and measurement conditions, as well as the DC and AC characteristics of the device. The parameters in the following DC and AC characteristic tables are derived from tests performed under the measurement conditions listed in the relevant tables. Designers should check that the operating conditions in their projects match the measurement conditions when using the quoted parameters ...

Page 14

... V or 4.5 to 5.5 V (except where noted A CC tDR tFB DON'T CARE HIGH-Z (min). Some systems may perform inadvertent WRITE cycles after V (min) but before normal system operations begin. Even though a power on Doc ID 2424 Rev 7 M48Z08, M48Z18 (1) Min Max ±1 CC ± – ...

Page 15

... M48Z08, M48Z18 Table 9. Power down/up AC characteristics Symbol ( PFD ( PFD PFD rec 1. Valid for ambient operating temperature: T noted (max PFD PFD until 200 µs after (min PFD SS Table 10. Power down/up trip points DC characteristics Symbol V Power-fail deselect voltage PFD V Battery backup switchover voltage ...

Page 16

... Doc ID 2424 Rev 7 M48Z08, M48Z18 C eA PCDIP inches Typ Min Max 0.350 0.380 0.015 0.030 0.330 0.350 0.015 0.021 0.045 0.070 0.008 0.012 1 ...

Page 17

... M48Z08, M48Z18 6 Part numbering Table 12. Ordering information scheme Example: Device Type M48Z Supply voltage and write protect voltage 4. 4 Speed –100 = 100 ns Package PC = PCDIP28 Temperature range °C Shipping method ® blank = ECOPACK ® ECOPACK package, tape & reel For other options, or for more information on any aspect of this device, please contact the ST sales office nearest you ...

Page 18

... Recycle or dispose of batteries in accordance with the battery manufacturer's instructions and local/national disposal and recycling regulations. Please refer to the following web site address for additional information regarding compliance statements and waste recycling www.st.com/nvram, then select "Lithium Battery Recycling" from "Related Topics". 18/20 Doc ID 2424 Rev 7 M48Z08, M48Z18 ...

Page 19

... SOH and 2-pin SH packages removed; reformatted; 2 temperature information added to tables 2.1 Remove all references to “clock” 2.2 Changes to text to reflect addition of M48Z08Y option 2.3 Modify reflow time and temperature footnotes Remove all references to “SNAPHAT” and M48Z08Y part 2.4 Table ...

Page 20

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 20/20 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 2424 Rev 7 M48Z08, M48Z18 ...

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