CY62158ELL-45ZSXI Cypress Semiconductor Corp, CY62158ELL-45ZSXI Datasheet - Page 4

• Manufacturer Part Number: CY62158ELL-45ZSXI
• Description: IC SRAM 8MBIT 45NS 44-TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62158ELL-45ZSXI

• Memory Size: 8M (1M x 8)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 25 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Memory Configuration: 1M X 8
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: TSOP
• No. Of Pins: 44
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground Potential –0.5V to V
DC Voltage Applied to Outputs
in High-Z State
Electrical Characteristics
Over the Operating Range
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Notes
Document #: 38-05684 Rev. *G
V
V
V
V
I
I
I
I
I
C
C
3. V
4. V
5. Full Device AC operation assumes a 100 s ramp time from 0 to V
6. Chip enables (CE
IX
OZ
CC
SB1
SB2
Parameter
Parameter
Parameter
OH
OL
IH
IIL
IN
OUT
IL
IH


[6]
(min) = –2.0V for pulse durations less than 20 ns.
(max) = V
JA
JC
CC
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
Current
Automatic CE Power down
Current — CMOS Inputs
Automatic CE Power-down
Current — CMOS Inputs
Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
[3, 4]
CC
+ 0.75V for pulse durations less than 20 ns.
1
and CE
Operating Supply
........................–0.5V to V
Description
Description
Description
2
), must be tied to CMOS levels to meet the I
V
V
GND < V
GND < V
f = f
f = 1 MHz
CE
V
f = f
CE
V
f = 0, V
I
I
OH
OL
f = 0 (OE, and WE), V
CC
CC
IN
IN
CC(max)
CC(max)
1
1
= 2.1 mA
MAX
> V
MAX
= –1 mA
> V
T
V
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
= 4.5V to 5.5V
= 4.5V to 5.5V
> V
> V
A
CC
CC
CC
CC
= 25°C, f = 1 MHz,
CC
(Address and Data Only),
CC
= 1/t
I
O
= V
< V
+ 0.5V
+ 0.5V
– 0.2V, V
= V
< V
– 0.2V or V
0.2V, CE
– 0.2V or CE
CC
CC(typ)
CC
RC
CC
CCmax
(min) and 200 s wait time after V
SB2
Test Conditions
, Output Disabled
/ I
IN
CCDR
2
Test Conditions
Test Conditions
< 0.2V)
IN
CC
< 0.2V
DC Input Voltage
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage............................................ >2001V
(MIL-STD-883, Method 3015)
Latch up Current...................................................... >200 mA
Operating Range
2
< 0.2V,
spec. Other inputs can be left floating.
V
I
CMOS levels
OUT
= V
< 0.2V,
CC
CY62158ELL
CCmax
= V
= 0 mA
Device
CCmax
CC
[3, 4]
stabilization.
Industrial –40°C to +85°C 4.5V – 5.5V
.....................–0.5V to V
Range
–0.5
Min
2.4
2.2
–1
–1
CY62158E MoBL
Temperature
TSOP II
Ambient
Typ
75.13
Max
8.95
1.8
18
10
10
-45
2
2
[2]
CC(max)
V
CC
Max
0.4
0.8
+1
+1
25
+ 0.5V
3
8
8
Page 4 of 13
C/W
C/W
V
Unit
Unit
+ 0.5V
pF
pF
CC
[5]
Unit
mA
mA
A
A
A
A
V
V
V
V

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