CY62157EV30LL-45BVXI Cypress Semiconductor Corp, CY62157EV30LL-45BVXI Datasheet - Page 6
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CY62157EV30LL-45BVXI
Manufacturer Part Number
CY62157EV30LL-45BVXI
Description
IC SRAM 8MBIT 45NS 48VFBGA
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet
1.CY62157EV30LL-45ZSXI.pdf
(17 pages)
Specifications of CY62157EV30LL-45BVXI
Memory Size
8M (512K x 16)
Package / Case
48-VFBGA
Format - Memory
RAM
Memory Type
SRAM
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
45 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.2 V
Maximum Operating Current
25 mA
Organization
512 K x 16
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
3 V
Memory Configuration
512K X 16
Supply Voltage Range
2.2V To 3.6V
Memory Case Style
BGA
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2078
CY62157EV30LL-45BVXI
CY62157EV30LL-45BVXI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY62157EV30LL-45BVXI
Manufacturer:
PANASONIC
Quantity:
1 000
Company:
Part Number:
CY62157EV30LL-45BVXI
Manufacturer:
CYPRESS
Quantity:
181
Company:
Part Number:
CY62157EV30LL-45BVXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY62157EV30LL-45BVXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Company:
Part Number:
CY62157EV30LL-45BVXIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY62157EV30LL-45BVXIT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Data Retention Characteristics
Over the Operating Range
Data Retention Waveform
Document #: 38-05445 Rev. *H
Parameter
V
I
t
t
Notes
CCDR
CDR
R
10. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
11. Tested initially and after any design or process changes that may affect these parameters.
12. Full device operation requires linear V
13. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.
DR
[12]
BHE.BLE
[11]
CE
V
CE
1
CC
or
or
2
V
Data retention current
Chip deselect to data
retention time
Operation recovery time
CC
for data retention
Description
CC
ramp from V
V
CE
V
CC
t
CC(min)
2
CDR
Figure 5. Data Retention Waveform
= 1.5V, CE
< 0.2V , V
DR
to V
CC(min)
IN
1
> V
> V
> 100 s or stable at V
CC
CC
DATA RETENTION MODE
– 0.2V or V
– 0.2V,
Conditions
V
DR
> 1.5V
IN
CC(min)
< 0.2V
> 100 s.
[13]
Industrial/
Auto-A
Auto-E
CC
V
CY62157EV30 MoBL
= V
CC(min)
t
CC(typ)
R
Min
t
1.5
RC
0
, T
A
= 25 °C.
Typ
2
[10]
Max Unit
30
5
Page 6 of 17
A
ns
ns
V
®
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