STPS20L60CGY-TR STMicroelectronics, STPS20L60CGY-TR Datasheet - Page 3

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STPS20L60CGY-TR

Manufacturer Part Number
STPS20L60CGY-TR
Description
Schottky Diodes & Rectifiers Auto pwr Schottky 2 x 10A 60V 0.56VF
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS20L60CGY-TR

Rohs
yes
Product
Schottky Rectifiers
Peak Reverse Voltage
60 V
Forward Continuous Current
20 A
Max Surge Current
220 A
Configuration
Dual
Forward Voltage Drop
0.74 V
Maximum Reverse Leakage Current
95 mA
Operating Temperature Range
- 40 C to + 175 C
Mounting Style
SMD/SMT
Package / Case
D2PAK

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Part Number:
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0
STPS20L60C-Y
Figure 1.
8
7
6
5
4
3
2
1
0
Figure 3.
Figure 5.
0.001
200
180
160
140
120
100
0
0.01
PF(av)(W)
80
60
40
20
0.1
1E-3
0
IM(A)
1
0.01
P
1
P
ARM
I
M
ARM
(1µs)
(t p )
2
δ
=0.5
t
δ = 0.05
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
3
1E-2
4
δ = 0.1
5
1
IF(av) (A)
t(s)
6
δ = 0.2
7
10
1E-1
8
9
δ = 0.5
δ
100
=tp/T
10
Doc ID 022399 Rev 1
Tc=100°C
Tc=25°C
Tc=75°C
T
11
t (µs)
δ = 1
p
1E+0
1000
tp
12
Figure 2.
Figure 4.
1.2
0.8
0.6
0.4
0.2
Figure 6.
1.0
0.8
0.6
0.4
0.2
0.0
12
10
1
0
8
6
4
2
0
25
1E-4
Zth(j-c)/Rth(j-c)
P
0
IF(av)(A)
ARM
P
δ = 0.2
δ = 0.5
δ = 0.1
ARM
δ
(25 °C)
=tp/T
Single pulse
(T )
j
25
T
50
Average current versus ambient
temperature (
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
transient impedance junction to
case versus pulse duration
1E-3
tp
50
Rth(j-a)=15°C/W
75
Tamb(°C)
1E-2
Rth(j-a)=Rth(j-c)
75
tp(s)

= 0.5) (per diode)
100
100
Characteristics
1E-1
δ
=tp/T
125
125
T
T (°C)
tp
1E+0
j
150
3/7
150

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