CY6264-55SNXI Cypress Semiconductor Corp, CY6264-55SNXI Datasheet - Page 5

• Manufacturer Part Number: CY6264-55SNXI
• Description: IC SRAM 64KBIT 55NS 28SOIC
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY6264-55SNXI

• Memory Size: 64K (8K x 8)
• Package / Case: 28-SOIC (7.5mm Width)
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 55 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 260 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Switching Waveforms
Document #: 001-02367 Rev. *B
Read Cycle No. 1
Read Cycle No. 2
Notes
7. Device is continuously selected. OE, CE = V
8. Address valid prior to or coincident with CE transition LOW.
9. WE is HIGH for read cycle.
10. Data I/O is High Z if OE = V
DATA OUT
DATA OUT
CURRENT
ADDRESS
SUPPLY
CE
CE
V
OE
OE
CC
1
2
[7, 8]
[9, 10]
PREVIOUS DATA VALID
HIGH IMPEDANCE
IH
, CE
t
PU
1
= V
t
LZCE
IH
, or WE = V
t
t
ACE
LZOE
IL
. CE
t
50%
OHA
t
2
DOE
= V
IL
.
IH.
t
AA
t
RC
t
RC
DATA VALID
t
DATA VALID
HZOE
t
HZCE
t
PD
50%
IMPEDANCE
HIGH
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