M29W640FB70ZA6E NUMONYX, M29W640FB70ZA6E Datasheet - Page 29
![IC FLASH 64MBIT 70NS 48TFBGA](/photos/7/24/72417/m29w640fb70za6e_sml.jpg)
M29W640FB70ZA6E
Manufacturer Part Number
M29W640FB70ZA6E
Description
IC FLASH 64MBIT 70NS 48TFBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W640FB70ZA6E.pdf
(71 pages)
Specifications of M29W640FB70ZA6E
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
64M (8Mx8, 4Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TFBGA
Package
48TFBGA
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 8|64KByte x 127
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5032
497-5032
497-5032
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W640FB70ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 8.
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Maximum value measured at worst case conditions for both temperature and V
Chip Erase
Block Erase (64 KBytes)
Erase Suspend Latency time
Program (Byte or Word)
Double Byte
Double Word /Quadruple Byte Program
Quadruple Word / Octuple Byte Program
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Chip Program (Double Word/Quadruple Byte Program)
Chip Program (Quadruple Word/Octuple Byte Program)
Program Suspend Latency time
Program/Erase Cycles (per Block)
Data Retention
Program, Erase times and Program, Erase Endurance cycles
Parameter
100,000
Min
20
CC
CC
.
after 100,00 program/erase cycles.
Typ
0.8
80
10
10
10
10
80
40
20
10
(1)(2)
Max
400
200
200
200
200
400
200
100
50
50
6
4
(4)
(4)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(2)
cycles
years
Unit
μs
μs
μs
μs
μs
μs
s
s
s
s
s
s
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