CY7C1021BNV33L-15ZXI Cypress Semiconductor Corp, CY7C1021BNV33L-15ZXI Datasheet - Page 5

• Manufacturer Part Number: CY7C1021BNV33L-15ZXI
• Description: IC SRAM 1MBIT 15NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1021BNV33L-15ZXI

• Memory Size: 1M (64K x 16)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 15 ns
• Supply Voltage (max): 3.63 V
• Supply Voltage (min): 2.97 V
• Maximum Operating Current: 160 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Density: 1Mb
• Access Time (max): 15ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 16b
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Supply Current: 160mA
• Operating Supply Voltage (min): 2.97V
• Operating Supply Voltage (max): 3.63V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 64K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... –65 °C to +150 °C
Ambient Temperature with
Power Applied .......................................... –55 °C to +125 °C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
Electrical Characteristics
Over the Operating Range
Capacitance
Document #: 001-06433 Rev. *C
V
V
V
V
I
I
I
I
I
Notes
Parameter
C
C
IX
OZ
CC
SB1
SB2
Parameter
2. Minimum voltage is –2.0 V for pulse durations of less than 20 ns.
3. Tested initially and after any design or process changes that may affect these parameters.
OH
OL
IH
IL
IN
OUT
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage Current
V
Automatic CE Power Down Current
—TTL Inputs
Automatic CE Power Down Current
—CMOS Inputs
Input Capacitance
Output Capacitance
[2]
CC
.................................. –0.5 V to V
[3]
Operating Supply Current
CC
to Relative GND
Description
Description
[2]
[2]
...–0.5 V to +4.6 V
CC
V
V
GND < V
GND < V
V
Max V
Max V
V
+ 0.5 V
T
CC
CC
CC
IN
A
= 25 °C, f = 1 MHz
< 0.3 V, f = 0
= Min, I
= Min, I
= Max, I
CC
CC
, CE > V
, CE > V
I
I
< V
< V
OH
OL
OUT
CC
CC
DC Input Voltage
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001 V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... > 200 mA
Operating Range
= 8.0 mA
= –4.0 mA
Test Conditions
Test Conditions
Industrial
, Output Disabled
IH
CC
= 0 mA, f = f
, V
Range
– 0.3 V, V
IN
> V
IH
or V
MAX
IN
> V
[2]
IN
Ambient Temperature
= 1/t
.............................. –0.5 V to V
< V
CC
–40 °C to +85 °C
RC
IL
– 0.3 V or
, f = f
MAX
CY7C1021BNV33
–0.3
Min
2.4
2.2
–1
–1
–
–
–
–
Max
-15
V
6
8
CC
3.3 V  10%
Max
160
500
0.4
0.8
+1
+1
40
+ 0.3 V
–
CC
V
Page 5 of 17
CC
+ 0.5 V
Unit
Unit
mA
mA
A
A
A
pF
pF
V
V
V
V
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