CY62128ELL-45ZXI Cypress Semiconductor Corp, CY62128ELL-45ZXI Datasheet - Page 4

• Manufacturer Part Number: CY62128ELL-45ZXI
• Description: IC SRAM 1MBIT 45NS 32TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62128ELL-45ZXI

• Memory Size: 1M (128K x 8)
• Package / Case: 32-TSOP I
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 16 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2040; CY62128ELL-45ZXI

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground
Potential............................... –0.5V to 6.0V (V
DC Voltage Applied to Outputs
in High-Z State
DC Input Voltage
Electrical Characteristics
Capacitance
Notes
Document #: 38-05485 Rev. *H
V
V
V
V
I
I
I
I
C
C
5. V
6. V
7. Full device AC operation assumes a 100 s ramp time from 0 to V
8. Only chip enables (CE
9. Tested initially and after any design or process changes that may affect these parameters.
IX
OZ
CC
SB2
Parameter
OH
OL
IH
IL
IN
OUT
IL(min)
IH(max)
[8]
Parameter
= –2.0V for pulse durations less than 20 ns.
= V
CC
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH Voltage V
Input LOW voltage V
Input Leakage
Current
Output Leakage
Current
V
Supply Current
Automatic CE
Power down
Current—CMOS
Inputs
[5, 6]
+ 0.75V for pulse durations less than 20 ns.
CC
[5, 6]
Description
(For all Packages)
Operating
.............. –0.5V to 6.0V (V
1
........... –0.5V to 6.0V (V
and CE
Input Capacitance
Output Capacitance
2
) must be at CMOS level to meet the I
I
I
GND < V
GND < V
f = f
f = 1 MHz
CE
V
f = 0, V
OH
OL
CC
CC
IN
Description
(Over the Operating Range)
[9]
1
= 2.1 mA
max
= –1 mA
> V
= 4.5V to 5.5V
= 4.5V to 5.5V
> V
CC
CC
= 1/t
Test Conditions
CC
O
I
< V
< V
= V
– 0.2V or V
CC(max)
CC(max)
CC(max)
– 0.2V or CE
RC
CC
CC
CC(max)
, Output Disabled
V
I
CMOS levels
OUT
CC
+ 0.5V)
+ 0.5V)
+ 0.5V)
CC
= V
= 0 mA
IN
(min) and 200 s wait time after V
T
V
SB2
CC(max)
2
< 0.2V,
A
CC
< 0.2V,
= 25°C, f = 1 MHz,
/ I
= V
CCDR
CC(typ)
spec. Other inputs can be left floating.
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current..................................................... > 200 mA
Operating Range
Test Conditions
CY62128ELL
–0.5
Min
2.4
2.2
–1
–1
45 ns (Ind’l/Auto-A)
Device
Typ
1.3
11
1
[3]
CC
V
Ind’l/Auto-A
CC
stabilization.
Max
Range
Auto-E
0.4
0.8
+1
+1
16
2
4
+ 0.5
–0.5
Min
2.4
2.2
–4
–4
–40°C to +125°C
–40°C to +85°C
55 ns (Auto-E)
CY62128E MoBL
Temperature
Typ
Max
Ambient
10
10
1.3
11
1
[3]
V
CC
Max
0.4
0.8
+4
+4
35
30
4
+ 0.5
4.5V to 5.5V
Unit
Page 4 of 14
pF
pF
V
Unit
mA
A
A
A
CC
V
V
V
V
[7]
®
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