CY62128ELL-45ZXI Cypress Semiconductor Corp, CY62128ELL-45ZXI Datasheet - Page 13

• Manufacturer Part Number: CY62128ELL-45ZXI
• Description: IC SRAM 1MBIT 45NS 32TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62128ELL-45ZXI

• Memory Size: 1M (128K x 8)
• Package / Case: 32-TSOP I
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 16 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2040; CY62128ELL-45ZXI

Document History Page
Document #: 38-05485 Rev. *H
Document Title: CY62128E MoBL
Document Number: 38-05485
Rev.
*G
*A
*B
*C
*D
*E
*F
*H
**
ECN No.
1024520
2548575
2934396
3113780
203120
299472
461631
464721
563144
Submission
12/17/2010
See ECN
See ECN
See ECN
See ECN
See ECN
See ECN
08/05/08
06/03/10
Date
®
1-Mbit (128K x 8) Static RAM
Orig. of
Change
PRAS Updated Logic Block Diagram.
NXR
NXR
NXR
VKN
VKN
AJU
SYT
AJU
New data sheet
Converted from Advance Information to Preliminary
Changed t
Changed t
Changed t
speed bins, respectively
Changed t
bins, respectively
Changed t
bins, respectively
Changed t
respectively
Added Pb-free package information
Added footnote #9
Changed operating range for SOIC package from Commercial to Industrial
Modified signal transition time from 5 ns to 3 ns in footnote #11
Changed max of I
Included Automotive Range and 55 ns speed bin
Removed 35 ns speed bin
Removed “L” version of CY62128E
Removed Reverse TSOP I package from Product offering
Changed I
= f
Changed I
Removed I
Changed I
Changed I
Changed I
Changed the AC Test load Capacitance value from 100 pF to 30 pF
Changed t
Changed t
Changed t
Changed t
Changed t
Changed t
Updated the Ordering Information Table
Added footnote 4 on page 2
Converted Automotive-E specs to final
Added footnote #9 related to I
Updated Ordering Information table
Corrected typo error in Ordering Information table
Added footnote #22 related to chip enable
Updated package diagrams
Updated template
Added Ordering Code Definitions.
Converted from Preliminary to Final
Updated the Block Diagram on page # 1
Added Automotive-A information
max
SD
OHA
DOE
HZOE
HZCE
SCE
CC (Typ)
CC (max)
SB2 (max)
SB2 (Typ)
CCDR (max)
LZOE
LZCE
HZCE
PWE
SD
LZWE
SB1
from 15 and 20 ns to 18 and 22 ns for the 35 and 45 ns speed bins,
from 22 to 25 ns
from 25 and 40 ns to 30 and 35 ns for the 35 and 45 ns speed
DC Specs from Electrical characteristics table
from 6 ns to 10 ns for both 35 ns and 45 ns, respectively
from 15 ns to 18 ns for 35 ns speed bin
from 30 to 35 ns
, t
from 6 to 10 ns
from 3 to 5 ns
from 12 and 15 ns to 18 and 22 ns for the 35 and 45 ns speed
from 22 to 18 ns
from 6 to 10 ns
HZWE
SB1
from 8 mA to 11 mA and I
from 1.5 mA to 2.0 mA for f = 1 MHz
from 0.5 A to 1 A
from 1.5 A to 4 A
, I
from 1.5 A to 4 A
SB2
from 12 and 15 ns to 15 and 18 ns for the 35 and 45 ns
and I
Description of Change
SB2
CCDR
and I
from 1.0 A to 1.5 A
CCDR
CC (max)
CY62128E MoBL
from 12 mA to 16 mA for f
Page 13 of 14
®
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