CY7C109D-10ZXI Cypress Semiconductor Corp, CY7C109D-10ZXI Datasheet - Page 7

IC SRAM 1MBIT 10NS 32TSOP

CY7C109D-10ZXI

Manufacturer Part Number
CY7C109D-10ZXI
Description
IC SRAM 1MBIT 10NS 32TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY7C109D-10ZXI

Memory Size
1M (128K x 8)
Package / Case
32-TSOP I
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
10ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Access Time
10 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
80 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
5 V
Density
1Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
17b
Package Type
TSOP-I
Operating Temp Range
-40C to 85C
Supply Current
80mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
128K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2011
Switching Waveforms
Write Cycle No. 1 (CE
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)
Notes
Document #: 38-05468 Rev. *F
17. Data IO is high impedance if OE = V
18. If CE
19. During this period the IOs are in the output state and input signals should not be applied.
ADDRESS
ADDRESS
DATA IO
DATA IO
1
goes HIGH or CE
CE
CE
CE
CE
WE
WE
OE
1
2
1
2
NOTE 19
2
1
goes LOW simultaneously with WE going HIGH, the output remains in a high-impedance state.
or CE
(continued)
2
IH
Controlled)
.
t
SA
t
HZOE
t
SA
[17, 18]
t
t
AW
AW
t
SCE
t
SCE
[17, 18]
t
WC
t
WC
t
PWE
DATA
t
t
PWE
SD
DATA VALID
t
SCE
t
t
SD
SCE
IN
VALID
t
t
HD
HD
t
t
HA
HA
CY7C1009D
CY7C109D
Page 7 of 12
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