CY62256VNLL-70ZXI Cypress Semiconductor Corp, CY62256VNLL-70ZXI Datasheet - Page 4

• Manufacturer Part Number: CY62256VNLL-70ZXI
• Description: IC SRAM 256KBIT 70NS 28TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62256VNLL-70ZXI

• Memory Size: 256K (32K x 8)
• Package / Case: 28-TSOP I
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 70 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 30 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3 V
• Density: 256Kb
• Access Time (max): 70ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3V
• Address Bus: 15b
• Package Type: TSOP-I
• Operating Temp Range: -40C to 85C
• Supply Current: 30mA
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 28
• Word Size: 8b
• Number Of Words: 32K
• Memory Configuration: 32K X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 28
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2085; CY62256VNLL-70ZXI

Capacitance
Thermal Resistance
Data Retention Characteristics
Notes
Document #: 001-06512 Rev. *B
C
C
V
I
t
t
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed V
CCDR
CDR
R
Parameter
Parameter
DR
IN
OUT
Parameter
[5]
Θ
Θ
[6]
V
CE
CC
JC
JA
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Input Capacitance
Output Capacitance
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
OUTPUT
Parameter
CC
[5]
V
INCLUDING
RTH
VTH
for Data Retention
R1
R2
CC
CC
JIG AND
Description
Description
Description
SCOPE
+ 0.3V.
50 pF
[5]
R1
t
CDR
1.8V
Equivalent to:
R2
Figure 1. AC Test Loads and Waveforms
(Over the Operating Range)
Figure 2. Data Retention Waveform
V
CE > V
V
or V
T
V
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
CC
IN
A
CC
> V
IN
= 25°C, f = 1 MHz,
= 1.4V,
= 3.0V
< 0.3V
CC
OUTPUT
CC
– 0.3V,
– 0.3V
DATA RETENTION MODE
Test Conditions
Test Conditions
Conditions
THÉ VENIN EQUIVALENT
V
GND
Value
V
1.750
1100
1500
DR
645
CC
< 5 ns
> 1.4V
R
th
[6]
10%
Com’l
Ind’l/Auto-A
Auto-E
ALL INPUT PULSES
90%
V
th
68.45
26.94
SOIC
1.8V
Min
1.4
t
RC
0
t
R
Max
6
8
90%
TSOPI
10%
87.62
23.73
Typ
0.1
< 5 ns
[2]
Ohms
Ohms
Ohms
Units
Volts
CY62256VN
RTSOPI
87.62
23.73
Max
50
3
6
Page 4 of 13
Unit
pF
pF
°C/W
°C/W
Unit
Unit
μA
ns
ns
V
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