CY62256VNLL-70SNXI Cypress Semiconductor Corp, CY62256VNLL-70SNXI Datasheet - Page 5

• Manufacturer Part Number: CY62256VNLL-70SNXI
• Description: IC SRAM 256KBIT 70NS 28SOIC
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62256VNLL-70SNXI

• Memory Size: 256K (32K x 8)
• Package / Case: 28-SOIC (7.5mm Width)
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 70 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 30 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3 V
• Memory Configuration: 32K X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: NSOIC
• No. Of Pins: 28
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2001-5

Capacitance
Thermal Resistance
Data Retention Characteristics
(Over the Operating Range)
Document Number: 001-06512 Rev. *D
C
C
V
I
t
t
Notes
Parameter
CCDR
CDR
R
6. Tested initially and after any design or process changes that may affect these parameters.
7. No input may exceed V
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
Parameter
DR
IN
OUT
Parameter
[6]
[6]


JA
JC
[6]
[6]
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
V
Data retention current
Chip deselect to data
retention time
Operation recovery time
OUTPUT
Parameter
Input capacitance
Output capacitance
CC
V
INCLUDING
RTH
VTH
for data retention
R1
R2
CC
CC
JIG AND
Description
SCOPE
Description
+ 0.3 V.
50 pF
Description
R1
Equivalent to:
R2
Figure 1. AC Test Loads and Waveforms
V
CE > V
V
or V
CC
IN
Still air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
T
> V
IN
A
= 1.4 V,
= 25 °C, f = 1 MHz, V
< 0.3 V
CC
OUTPUT
CC
– 0.3 V,
– 0.3 V
Test Conditions
Conditions
Test Conditions
THÉ VENIN EQUIVALENT
GND
Value
V
1.750
1100
1500
645
CC
< 5 ns
R
th
CC
[7]
10%
= 3.0 V
Commercial
Indusrial/
Automotive-A
Automotive-E
ALL INPUT PULSES
90%
V
th
68.45
26.94
SOIC
Min
CC
t
1.4
RC
–
–
–
0
= V
CC
Max
6
8
90%
Typ, T
TSOPI
87.62
23.73
10%
Typ
0.1
–
–
–
< 5 ns
A
[8]
= 25 °C, and t
Ohms
Ohms
Ohms
Units
Volts
RTSOPI
CY62256VN
87.62
23.73
Max
50
–
3
6
–
–
AA
Page 5 of 14
Unit
= 70 ns.
pF
pF
Unit
C/W
C/W
A
ns
ns
Unit
V
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