M25P32-VME6G NUMONYX, M25P32-VME6G Datasheet - Page 42

IC FLASH 32MBIT 75MHZ 8VDFPN

M25P32-VME6G

Manufacturer Part Number
M25P32-VME6G
Description
IC FLASH 32MBIT 75MHZ 8VDFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheets

Specifications of M25P32-VME6G

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Clock Frequency
50MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
VDFPN
No. Of Pins
8
Base Number
25
Frequency
75MHz
Ic Generic
RoHS Compliant
Memory Configuration
4M X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P32-VME6G
Manufacturer:
Numonyx/ST Micro
Quantity:
34 441
Part Number:
M25P32-VME6G
Manufacturer:
MICRON
Quantity:
2 180
Part Number:
M25P32-VME6G
Manufacturer:
MICRON
Quantity:
50
Part Number:
M25P32-VME6G
Manufacturer:
ST
0
Part Number:
M25P32-VME6G
Manufacturer:
MICRON/镁光
Quantity:
20 000
Part Number:
M25P32-VME6G-PBF-T2
Quantity:
18 474
Part Number:
M25P32-VME6G-PBF-T2
Manufacturer:
ST
Quantity:
1 000
Part Number:
M25P32-VME6G-PBF-T2
Manufacturer:
ST
0
Table 15.
1. Details of how to find the Technology Process in the marking are given in AN1995, see also
2. Typical values given for T
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Expressed as a slew-rate.
6. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
7. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
8. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Figure 23. Serial input timing
42/54
Symbol
t
PP
Information, Standard
sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤ 256)
t
t
CH
t
SE
BE
W
(7)
+ t
S
C
D
Q
CL
Applies only to products made with T9HX technology, identified with Process digit “4”
must be greater than or equal to 1/ f
Alt.
tCHSL
AC characteristics (
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Sector Erase cycle time
Sector Erase cycle time (V
Bulk Erase cycle time
Bulk Erase cycle time (V
tDVCH
Parts.
A
= 25 °C.
High Impedance
Test conditions specified in
MSB IN
tSLCH
T9HX technology
Parameter
PP
tCHDX
C
PP
= V
= V
PPH
PPH
)
)
) (continued)
Table 10
tCLCH
tCHSH
and
LSB IN
Min.
Table 12
int(n/8) × 0.02
Section 12: Ordering
tCHCL
Typ.
tSHSL
0.64
1.3
0.6
0.6
23
13
tSHCH
(2)
(8)
AI01447C
Max.
(1)
15
80
5
3
Unit
ms
ms
s
s

Related parts for M25P32-VME6G