M24C02-WBN6P STMicroelectronics, M24C02-WBN6P Datasheet - Page 20
![IC EEPROM 2KBIT 400KHZ 8DIP](/photos/1/39/13944/497-8-dip_sml.jpg)
M24C02-WBN6P
Manufacturer Part Number
M24C02-WBN6P
Description
IC EEPROM 2KBIT 400KHZ 8DIP
Manufacturer
STMicroelectronics
Datasheets
1.M24C01-WMN6TP.pdf
(39 pages)
2.M24C02-WBN6P.pdf
(10 pages)
3.M24C02-WBN6P.pdf
(28 pages)
Specifications of M24C02-WBN6P
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
2K (256 x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
2.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-DIP (0.300", 7.62mm)
Organization
256 K x 8
Interface Type
I2C
Maximum Clock Frequency
0.4 MHz
Access Time
900 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.5 V
Maximum Operating Current
2 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
6.5 V
Capacitance, Input
8 pF (SDA), 6 pF (Other Pins)
Current, Input, Leakage
±2 μA
Current, Operating
2 mA
Current, Output, Leakage
±2
Data Retention
>40 yrs.
Density
2K
Package Type
PDIP8
Temperature, Operating
-40 to +85 °C
Time, Access
900 ns
Time, Fall
50 ns
Time, Rise
50 ns
Voltage, Esd
4000 V
Voltage, Input, High
3.5 to 6.5 V
Voltage, Input, Low
0.75 to 1.65 V
Voltage, Output, Low
0.4 V
Voltage, Supply
2.5 to 5.5 V
Memory Configuration
256 X 8
Clock Frequency
400kHz
Supply Voltage Range
2.5V To 5.5V
Memory Case Style
DIP
No. Of Pins
8
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8584-5
M24C02-WBN6P
M24C02-WBN6P
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M24C02-WBN6P
Manufacturer:
ST
Quantity:
20 000
DC and AC parameters
20/39
Table 9.
1. The device is not selected after a power-up, after a read command (after the Stop condition), or after the
Table 10.
1. The device is not selected after a power-up, after a read command (after the Stop condition), or after the
Symbol
Symbol
I
V
I
V
I
V
I
CC1
V
V
I
I
completion of the internal write cycle t
CC1
V
completion of the internal write cycle t
I
LO
CC
I
CC
LO
LI
OL
OL
IH
LI
IL
IH
IL
Input leakage current
(SCL, SDA, E0, E1,and E2)
Output leakage current
Supply current
Standby supply current
Input low voltage (SDA,
SCL, WC)
Input high voltage (SDA,
SCL, WC)
Output low voltage
Input leakage current (SCL,
SDA, E0, E1,and E2)
Output leakage current
Supply current
Standby supply current
Input low voltage (SDA,
SCL, WC)
Input high voltage (SDA,
SCL, WC)
Output low voltage
DC characteristics (M24Cxx-W, device grade 6)
DC characteristics (M24Cxx-W, device grade 3)
Parameter
Parameter
Doc ID 5067 Rev 16
W
W
V
Test conditions (in addition to those in
Device not selected
SDA in Hi-Z, external voltage applied on
IN
(t
(t
W
I
W
Device not selected
(in addition to those in
Device not selected
OL
= V
I
OL
is triggered by the correct decoding of a write command).
is triggered by the correct decoding of a write command).
I
SDA in Hi-Z, external voltage
applied on SDA: V
OL
I
V
= 2.1 mA when V
OL
V
SS
= 2.1 mA when V
IN
V
V
CC
= 3 mA when V
(rise/fall time < 50 ns)
(rise/fall time < 50 ns)
V
for 2.5 V < V
CC
CC
= 3 mA when V
or V
= V
(rise/fall time < 50 ns)
(rise/fall time < 50 ns)
or V
CC
or V
M24C16, M24C08, M24C04, M24C02, M24C01
= 2.5 V, f
Test condition
SDA: V
Standby mode
= 5 V, f
= 2.5 V, f
SS
CC
= 5 V, f
CC
CC
or V
, V
Table
, device in Standby mode
, V
CC
C
SS
(1)
CC
C
CC
c
= 400 kHz
c
CC
= 400 kHz
= 400 kHz
, V
= 2.5 V
or V
(1)
(1)
6)
, device in
= 5 V
= 400 kHz
CC
SS
CC
CC
IN
, V
CC
, V
CC
5.5 V
= 2.5 V or
or V
= 5.5 V
= V
Table
IN
IN
= 2.5 V or
= 5.5 V
= V
= V
SS
CC
SS
SS
or V
6)
CC
0.7V
–0.45
Min.
,
0.7V
–0.45 0.3V
CC
Min.
CC
0.3V
V
Max.
CC
± 2
± 2
0.4
V
3
3
5
2
Max. Unit
CC
± 2
± 2
0.4
+1
CC
2
1
1
+1
CC
Unit
mA
mA
µA
µA
µA
µA
mA
mA
V
V
V
µA
µA
µA
V
V
V