STM8S103F3M6TR STMicroelectronics, STM8S103F3M6TR Datasheet - Page 70

no-image

STM8S103F3M6TR

Manufacturer Part Number
STM8S103F3M6TR
Description
8-bit Microcontrollers - MCU Access line 8-bit MCU 8Kb
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8S103F3M6TR

Rohs
yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STM8S103F3M6TR
Manufacturer:
SONY
Quantity:
12 500
Part Number:
STM8S103F3M6TR
Manufacturer:
ST
0
Part Number:
STM8S103F3M6TR
0
Electrical characteristics
10.3.5
70/117
Memory characteristics
RAM and hardware registers
Flash program memory/data EEPROM memory
Symbol
Symbol
V
(1)
or in hardware registers (only in halt mode). Guaranteed by design, not tested in production.
(2)
V
t
t
N
t
prog
erase
RET
RM
DD
RW
Minimum supply voltage without losing data stored in RAM (in halt mode or under reset)
Refer to the Operating conditions section for the value of V
Parameter
Operating voltage
(all modes, execution/
write/erase)
Standard programming time
(including erase) for
byte/word/block (1 byte/
4 bytes/64 bytes)
Fast programming time for
1 block (64 bytes)
Erase time for 1 block
(64 bytes)
Erase/write cycles
(program memory)
Erase/write cycles
(data memory)
Data retention (program
and data memory) after 10k
erase/write cycles at
T
A
= +55 °C
Parameter
Data retention mode
Table 37: Flash program memory/data EEPROM memory
Table 36: RAM and hardware registers
(2)
(2)
DocID15441 Rev 9
(1)
Conditions
f
T
T
T
CPU
A
A
RET
= +85 °C
= +125 °C
≤ 16 MHz
= 55°C
Conditions
Halt mode (or reset)
STM8S103K3 STM8S103F3 STM8S103F2
Min
2.95
100
000
300
000
20
IT-max
-
-
-
(1)
Typ
1 M
6
3
3
-
-
-
Min
V
IT-max
Max
3.33
3.33
5.5
6.6
-
-
-
(2)
Unit
V
Unit
cycles
years
ms
V

Related parts for STM8S103F3M6TR