M93C76-RDW6TP STMicroelectronics, M93C76-RDW6TP Datasheet - Page 9
![IC EEPROM 8KBIT 1MHZ 8TSSOP](/photos/5/43/54342/497-8-tssop_sml.jpg)
M93C76-RDW6TP
Manufacturer Part Number
M93C76-RDW6TP
Description
IC EEPROM 8KBIT 1MHZ 8TSSOP
Manufacturer
STMicroelectronics
Datasheet
1.M93C46-WMN6TP.pdf
(36 pages)
Specifications of M93C76-RDW6TP
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
8K (1K x 8 or 512 x 16)
Speed
1MHz
Interface
Microwire, 3-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8661-2
M93C76-RDW6TP
M93C76-RDW6TP
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
M93C86, M93C76, M93C66, M93C56, M93C46
2
Connecting to the serial bus
Figure 3
Only one device is selected at a time, so only one device drives the Serial Data output (Q)
line at a time, the other devices are high impedance.
The pull-down resistor R (represented in
bus master leaves the S line in the high impedance state.
In applications where the bus master may be in a state where all inputs/outputs are high
impedance at the same time (for example, if the bus master is reset during the transmission
of an instruction), the clock line (C) must be connected to an external pull-down resistor so
that, if all inputs/outputs become high impedance, the C line is pulled low (while the S line is
pulled low): this ensures that C does not become high at the same time as S goes low, and
so, that the t
Figure 3.
CS3 CS2 CS1
Bus master
shows an example of three memory devices connected to an MCU, on a serial bus.
SLCH
Bus master and memory devices on the serial bus
SDO
SCK
SDI
requirement is met. The typical value of R is 100 k .
R
R
C Q D
S
memory device
Doc ID 4997 Rev 11
M93xxx
ORG
V
CC
Figure
V
R
SS
3) ensures that no device is selected if the
C Q D
memory device
S
M93xxx
ORG
V
CC
Connecting to the serial bus
V
R
SS
C Q D
memory device
S
M93xxx
V
CC
ORG
AI14377b
V
SS
V
V
CC
SS
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