IS62WV5128BLL-55H-TR ISSI, IS62WV5128BLL-55H-TR Datasheet - Page 4

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IS62WV5128BLL-55H-TR

Manufacturer Part Number
IS62WV5128BLL-55H-TR
Description
SRAM 4Mb 512Kx8 55ns 2.5v-3.6v
Manufacturer
ISSI
Type
Asynchronousr
Datasheet

Specifications of IS62WV5128BLL-55H-TR

Product Category
SRAM
Memory Size
4 Mbit
Organization
512 K x 8
Access Time
55 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.5 V
Maximum Operating Current
15 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Package / Case
TSOP-32
Interface
TTL
Factory Pack Quantity
2000
IS62WV5128ALL,
OPERATING RANGE (V
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
DC ELECTRICAL CHARACTERISTICS
Notes:
1. V
4
Range
Commercial
Industrial
Symbol
V
V
T
P
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
Symbol
V
V
V
V
I
I
LI
LO
STG
TERM
DD
T
OH
IL
OL
IH
IL (1)
(min.) = –1.0V for pulse width less than 10 ns.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Ambient Temperature
Parameter
Terminal Voltage with Respect to GND
V
Storage Temperature
Power Dissipation
DD
–40°C to +85°C
Related to GND
0°C to +70°C
IS62WV5128BLL
DD
)
Test Conditions
I
I
I
I
GND ≤ V
GND ≤ V
OH
OH
OL
OL
(1)
= 0.1 mA
= 2.1 mA
= -0.1 mA
= -1 mA
(Over Operating Range)
OUT
IN
≤ V
≤ V
IS62WV5128ALL
DD
1.65V - 2.2V
1.65V - 2.2V
DD
, Outputs Disabled
1.65-2.2V
1.65-2.2V
1.65-2.2V
1.65-2.2V
Integrated Silicon Solution, Inc. — www.issi.com
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.5-3.6V
–0.2 to V
–0.2 to V
V
–65 to +150
DD
Value
1.0
DD
DD
+0.3
+0.3
IS62WV5128BLL
Min.
–0.2
–0.2
2.5V - 3.6V
2.5V - 3.6V
1.4
2.2
1.4
2.2
–1
–1
Unit
V
V
°C
W
V
V
DD
DD
Max.
0.2
0.4
0.4
0.6
1
1
+ 0.2
+ 0.3
Unit
01/29/08
µA
µA
Rev. E
V
V
V
V
V
V
V
V

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