MT46H32M16LFBF-5:B TR Micron Technology Inc, MT46H32M16LFBF-5:B TR Datasheet - Page 94

• Manufacturer Part Number: MT46H32M16LFBF-5:B TR
• Description: IC DDR SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M16LFBF-5:B TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1382-2

Figure 53: Deep Power-Down Mode
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
CKE
CK#
CK
All banks idle with no
activity on the data bus
1
Notes:
NOP
T0
1. Clock must be stable prior to CKE going HIGH.
2. DPD = deep power-down.
3. Upon exit of deep power-down mode, a full DRAM initialization sequence is required.
t
IS
DPD
T1
Enter deep power-down mode
2
T2
(
(
(
)
(
)
(
t
)
)
)
(
CKE
(
(
(
)
(
)
)
)
)
94
512Mb: x16, x32 Mobile LPDDR SDRAM
Ta0
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
Ta1
Exit deep power-down mode
T = 200µs
© 2004 Micron Technology, Inc. All rights reserved.
Ta2
NOP
Power-Down
Don’t Care
Ta3
PRE
3