MT46H32M16LFBF-5:B TR Micron Technology Inc, MT46H32M16LFBF-5:B TR Datasheet - Page 74
MT46H32M16LFBF-5:B TR
Manufacturer Part Number
MT46H32M16LFBF-5:B TR
Description
IC DDR SDRAM 512MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H32M16LFBF-5:B TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
512M (32Mx16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
115mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1382-2
- Current page: 74 of 98
- Download datasheet (4Mb)
Figure 35: WRITE Burst
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Notes:
Command
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
1. An uninterrupted burst of 4 is shown.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. D
Address
DQS
DQS
DQS
DQ
DQ
DQ
CK#
DM
DM
DM
IN
CK
b = data-in for column b.
3
3
3
WRITE
Bank a,
Col b
T0
1,2
t DQSS
t DQSS
t DQSS
D
IN
74
NOP
D
T1
IN
D
D
512Mb: x16, x32 Mobile LPDDR SDRAM
IN
IN
Don’t Care
D
IN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
D
IN
IN
NOP
T2
D
IN
D
D
IN
IN
T2n
D
IN
Transitioning Data
D
IN
T3
NOP
© 2004 Micron Technology, Inc. All rights reserved.
WRITE Operation
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