IS62WV5128BLL-55T2LI ISSI, Integrated Silicon Solution Inc, IS62WV5128BLL-55T2LI Datasheet - Page 4

IC SRAM 4MBIT 55NS 32TSOP

IS62WV5128BLL-55T2LI

Manufacturer Part Number
IS62WV5128BLL-55T2LI
Description
IC SRAM 4MBIT 55NS 32TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS62WV5128BLL-55T2LI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-TSOP II
Density
4Mb
Access Time (max)
55ns
Sync/async
Asynchronous
Architecture
SDR
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
19b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
45mA
Operating Supply Voltage (min)
2.5V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1115
IS62WV5128BLL-55T2LI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS62WV5128BLL-55T2LI
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS62WV5128BLL-55T2LI
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS62WV5128BLL-55T2LI
Quantity:
136
Company:
Part Number:
IS62WV5128BLL-55T2LI
Quantity:
136
IS62WV5128ALL,
OPERATING RANGE (V
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
DC ELECTRICAL CHARACTERISTICS
Notes:
1. V
4
Range
Commercial
Industrial
Symbol
V
V
T
P
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
Symbol
V
V
V
V
I
I
LI
LO
STG
TERM
DD
T
OH
IL
OL
IH
IL (1)
(min.) = –1.0V for pulse width less than 10 ns.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Ambient Temperature
Parameter
Terminal Voltage with Respect to GND
V
Storage Temperature
Power Dissipation
DD
–40°C to +85°C
Related to GND
0°C to +70°C
IS62WV5128BLL
DD
)
Test Conditions
I
I
I
I
GND ≤ V
GND ≤ V
OH
OH
OL
OL
(1)
= 0.1 mA
= 2.1 mA
= -0.1 mA
= -1 mA
(Over Operating Range)
OUT
IN
≤ V
≤ V
IS62WV5128ALL
DD
1.65V - 2.2V
1.65V - 2.2V
DD
, Outputs Disabled
1.65-2.2V
1.65-2.2V
1.65-2.2V
1.65-2.2V
Integrated Silicon Solution, Inc. — www.issi.com
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.5-3.6V
–0.2 to V
–0.2 to V
V
–65 to +150
DD
Value
1.0
DD
DD
+0.3
+0.3
IS62WV5128BLL
Min.
–0.2
–0.2
2.5V - 3.6V
2.5V - 3.6V
1.4
2.2
1.4
2.2
–1
–1
Unit
V
V
°C
W
V
V
DD
DD
Max.
0.2
0.4
0.4
0.6
1
1
+ 0.2
+ 0.3
Unit
01/29/08
µA
µA
Rev. E
V
V
V
V
V
V
V
V

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