MT45W8MW16BGX-701 IT TR Micron Technology Inc, MT45W8MW16BGX-701 IT TR Datasheet - Page 48
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MT45W8MW16BGX-701 IT TR
Manufacturer Part Number
MT45W8MW16BGX-701 IT TR
Description
IC PSRAM 128MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W8MW16BGX-701_IT_TR.pdf
(68 pages)
Specifications of MT45W8MW16BGX-701 IT TR
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
128M (8Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Operating Temperature (max)
85C
Operating Temperature (min)
-40C
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1444-2
Figure 36:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
DQ[15:0]
LB#/UB#
A[22:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
4-Word Burst READ Operation – Fixed Latency
Notes:
High-Z
READ Burst Identified
t CSP
t SP
t SP
Address
t SP
(WE# = HIGH)
t SP
Valid
t CEW
1. Non-default BCR settings: Fixed latency; latency code two (three clocks); WAIT active LOW;
t
HD
WAIT asserted during delay.
t HD
t AVH
High-Z
t AADV
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
t AA
t CO
t OLZ
t KHKL
t BOE
t ACLK
t KHTL
t CLK
Output
48
Valid
t CEM
t KOH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Page/Burst CellularRAM 1.5 Memory
Output
Valid
t KP
Output
Valid
©2004 Micron Technology, Inc. All rights reserved.
Don’t Care
t KP
Output
Valid
t HD
t HD
t
t
OHZ
HZ
t CBPH
Undefined
High-Z