IS66WVE1M16BLL-55BLI-TR ISSI, IS66WVE1M16BLL-55BLI-TR Datasheet - Page 18

• Manufacturer Part Number: IS66WVE1M16BLL-55BLI-TR
• Description: SRAM 16Mb 1M x 16 55ns Pseudo SRAM
• Manufacturer: ISSI

Specifications of IS66WVE1M16BLL-55BLI-TR

• Rohs: yes
• Memory Size: 16 Mbit
• Organization: 1 Mbit x 16
• Access Time: 55 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 35 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: BGA-48
• Memory Type: Psuedo
• Factory Pack Quantity: 2500

Electrical Characteristics
Voltage to Any Ball Except VDD, VDDQ Relative to VSS
Voltage on VDD Supply Relative to VSS
Voltage on VDDQ Supply Relative to VSS
Storage Temperature (plastic)
Operating Temperature
Soldering Temperature and Time
Notes:
Table 5. Electrical Characteristics and Operating Conditions
Industrial Temperature (–40ºC < TC < +85ºC)
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Asynchronous Random
READ/WRITE
Asynchronous
PAGE READ
Standby Current
Rev. A | Feb. 2012
Table 4. Absolute Maximum Ratings
Notes:
Description
10s (solder ball only)
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other
conditions above those indicated in this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
1. Input signals may overshoot to VDDQ + 1.0V for periods less than 2ns during transitions.
2. Input signals may undershoot to Vss – 1.0V for periods less than 2ns during transitions.
3. This parameter is specified with the outputs disabled to avoid external loading effects.
4. ISB (MAX) values measured with PAR set to FULL ARRAY at +85°C. In order to achieve low
User must add required current to drive output capacitance expected in the actual system.
standby current, all inputs must be driven to either VDDQ or VSS. ISB might be set slightly
higher for up to 500ms after power-up, or when entering standby mode.
Parameter
VIN = VDDQ or 0V
VIN = 0 to VDDQ
VIN=VDDQ or 0V
IOL = +0.2mA
IOH = -0.2mA
Conditions
Conditions
Chip enabled,
CE# = VDDQ
Chip Disabled
OE#=VIH or
I
OUT
= 0
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IDD1P
VDDQ
IDD1
VDD
VOH
VOL
VIH
ILO
ISB
VIL
ILI
Symbol
Symbol
- [e-mail]
-55
-70
-55
-70
0.80 VDDQ
VDDQ-0.4
-0.5V to 4.0V or VDDQ + 0.3V
MIN
-0.20
Typ
2.7
2.7
-55°Cto + 150°C
-40°C to + 85°C
-0.2V to + 4.0V
-0.2V to + 4.0V
+ 260°C
Rating
0.20 VDDQ
VDDQ+0.2
IS66WVE1M16BLL
MAX
MAX
3.6
3.6
0.4
35
30
23
18
80
1
1
Unit
Unit
mA
mA
uA
uA
uA
V
V
V
V
V
V
Note
Note
1
2
3
3
4
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