IS61WV5128BLL-10BLI ISSI, Integrated Silicon Solution Inc, IS61WV5128BLL-10BLI Datasheet - Page 5
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IS61WV5128BLL-10BLI
Manufacturer Part Number
IS61WV5128BLL-10BLI
Description
IC SRAM 4MBIT 10NS 36MBGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61WV5128BLL-10TLI.pdf
(25 pages)
Specifications of IS61WV5128BLL-10BLI
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
1.65 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
36-MBGA
Density
4Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
2.5/3.3V
Address Bus
19b
Package Type
Mini BGA
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
40mA
Operating Supply Voltage (min)
2.4V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
36
Word Size
8b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1063
IS61WV5128BLL-10BLI
IS61WV5128BLL-10BLI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61WV5128BLL-10BLI
Manufacturer:
ISSI
Quantity:
1 000
Company:
Part Number:
IS61WV5128BLL-10BLI
Manufacturer:
LT
Quantity:
129
Company:
Part Number:
IS61WV5128BLL-10BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS61WV5128BLL-10BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
TRUTH TABLE
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Integrated Silicon Solution, Inc. — www.issi.com
Rev. I
08/10/09
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
Mode
Not Selected
(Power-down)
Output Disabled H
Read
Write
Symbol
C
C
t
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Symbol
V
V
P
stg
In
I/o
terM
dd
t
Parameter
Terminal Voltage with Respect to GND
V
Storage Temperature
Power Dissipation
dd
Parameter
Input Capacitance
Input/Output Capacitance
A
Relates to GND
WE
(1,2)
H
X
= 25°C, f = 1 MHz, V
L
CE
H
L
L
L
OE
X
H
X
L
I/O Operation V
dd
= 3.3V.
High-Z
High-Z
(1)
d
d
out
In
Conditions
V
V
out
In
= 0V
DD
I
= 0V
sb
–0.5 to V
Current
1
I
I
I
–65 to +150
CC
CC
CC
, I
–0.3 to 4.0
sb
Value
2
1.0
dd
+ 0.5
Max.
6
8
Unit
°C
W
V
V
Unit
pF
pF
5