71321LA25TF IDT, 71321LA25TF Datasheet - Page 10

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71321LA25TF

Manufacturer Part Number
71321LA25TF
Description
SRAM
Manufacturer
IDT
Datasheet

Specifications of 71321LA25TF

Part # Aliases
IDT71321LA25TF
Timing Waveform of Write Cycle No. 1, (R/W Controlled Timing)
Timing Waveform of Write Cycle No. 2, (CE Controlled Timing)
ADDRESS
ADDRESS
NOTES:
1. R/W or CE must be HIGH during all address transitions.
2. A write occurs during the overlap (t
3. t
4. During this period, the l/O pins are in the output state and input signals must not be applied.
5. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal (CE or R/W) is asserted last.
7. This parameter is determined to be device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test
8. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of t
DATA
IDT71321SA/LA and IDT71421SA/LA
High Speed 2K x 8 Dual-Port Static RAM with Interrupts
DATA
DATA
Load (Figure 2).
placed on the bus for the required t
as the specified t
WR
R/W
R/W
is measured from the earlier of CE or R/W going HIGH to the end of the write cycle.
OUT
CE
OE
CE
IN
IN
WP
.
t
AS
t
EW
AS
DW
(6)
(6)
or t
. If OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short
WP
(4)
) of CE = V
IL
t
WZ
and R/W= V
(7)
t
AW
t
AW
IL
t
WC
.
t
WC
t
WP
6.42
t
10
(2)
EW
(2)
t
DW
t
DW
WP
or (t
Industrial and Commercial Temperature Ranges
WZ
+ t
DW
t
WR
) to allow the I/O drivers to turn off data to be
(3)
t
WR
t
DH
(3)
t
OW
t
DH
(1,5)
t
HZ
(1,5,8)
(7)
t
HZ
(7)
(4)
2691 drw 09
2691 drw 08

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